Zobrazeno 1 - 10
of 246
pro vyhledávání: '"V Ursaki"'
Electrochemical nanostructuring of (111) oriented GaAs crystals: from porous structures to nanowires
Autor:
Elena I. Monaico, Eduard V. Monaico, Veaceslav V. Ursaki, Shashank Honnali, Vitalie Postolache, Karin Leistner, Kornelius Nielsch, Ion M. Tiginyanu
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 11, Iss 1, Pp 966-975 (2020)
A comparative study of the anodization processes occurring at the GaAs(111)A and GaAs(111)B surfaces exposed to electrochemical etching in neutral NaCl and acidic HNO3 aqueous electrolytes is performed in galvanostatic and potentiostatic anodization
Externí odkaz:
https://doaj.org/article/553d70e80b094e11b1c86112b04a1423
Autor:
Vadim Morari, Aida Pantazi, Nicolai Curmei, Vitalie Postolache, Emil V. Rusu, Marius Enachescu, Ion M. Tiginyanu, Veaceslav V. Ursaki
Publikováno v:
Beilstein Journal of Nanotechnology, Vol 11, Iss 1, Pp 899-910 (2020)
A series of Zn1−xMgxO thin films with the composition range x = 0.00–0.40 has been prepared by sol–gel spin coating on Si substrates with a post-deposition thermal treatment in the temperature range of 400–650 °C. The morphology of the films
Externí odkaz:
https://doaj.org/article/a998ca76ed224f23850b9f3e770dcc80
Autor:
Vladimir Ciobanu, Veaceslav V. Ursaki, Sebastian Lehmann, Tudor Braniste, Simion Raevschi, Victor V. Zalamai, Eduard V. Monaico, Pascal Colpo, Kornelius Nielsch, Ion M. Tiginyanu
Publikováno v:
Crystals, Vol 12, Iss 12, p 1753 (2022)
In this paper, new aeromaterials are proposed on the basis of titania thin films deposited using atomic layer deposition (ALD) on a sacrificial network of ZnO microtetrapods. The technology consists of two technological steps applied after ALD, namel
Externí odkaz:
https://doaj.org/article/2ea78ece871146c4a1b43e861978d427
Autor:
Călin Constantin Moise, Geanina Valentina Mihai, Liana Anicăi, Eduard V. Monaico, Veaceslav V. Ursaki, Marius Enăchescu, Ion M. Tiginyanu
Publikováno v:
Nanomaterials, Vol 12, Iss 21, p 3787 (2022)
Porous InP templates possessing a thickness of up to 100 µm and uniformly distributed porosity were prepared by anodic etching of InP substrates exhibiting different electrical conductivities, involving an environmentally friendly electrolyte. Ni na
Externí odkaz:
https://doaj.org/article/a0066119252f417aab0a261d998b5787
Autor:
Eduard V. Monaico, Vadim Morari, Maksim Kutuzau, Veaceslav V. Ursaki, Kornelius Nielsch, Ion M. Tiginyanu
Publikováno v:
Materials, Vol 15, Iss 18, p 6262 (2022)
Uniform nanogranular NiFe layers with Ni contents of 65%, 80%, and 100% have been electroplated in the potentiostatic deposition mode on both planar substrates and arrays of nanowires prepared by the anodization of GaAs substrates. The fabricated pla
Externí odkaz:
https://doaj.org/article/3adab53f30f4445380028ae86b8fa6f5
Autor:
Vadim Morari, Veaceslav V. Ursaki, Emil V. Rusu, Victor V. Zalamai, Pascal Colpo, Ion M. Tiginyanu
Publikováno v:
Nanomaterials, Vol 12, Iss 18, p 3209 (2022)
A series of Zn1−xMgxO thin films with x ranging from 0 to 0.8 were prepared by spin coating and aerosol spray pyrolysis deposition on Si and quartz substrates. The morphology, composition, nano-crystalline structure, and optical and vibration prope
Externí odkaz:
https://doaj.org/article/c454f68fc1474c678b41d85f718fc4fc
Autor:
Veaceslav V. Ursaki, Sebastian Lehmann, Victor V. Zalamai, Vadim Morari, Kornelius Nielsch, Ion M. Tiginyanu, Eduard V. Monaico
Publikováno v:
Crystals, Vol 12, Iss 8, p 1145 (2022)
GaAs nanowire arrays have been prepared by anodization of GaAs substrates. The nanowires produced on (111)B GaAs substrates were found to be oriented predominantly perpendicular to the substrate surface. The prepared nanowire arrays have been coated
Externí odkaz:
https://doaj.org/article/426bc230b26c438c85a71fc2ac389781
Publikováno v:
Nanomaterials, Vol 12, Iss 9, p 1506 (2022)
The preparation of GaAs nanowire templates with the cost-effective electrochemical etching of (001) and (111)B GaAs substrates in a 1 M HNO3 electrolyte is reported. The electrochemical etching resulted in the obtaining of GaAs nanowires with both pe
Externí odkaz:
https://doaj.org/article/3bfa642d456446f89aa6da3d1117afd7
Publikováno v:
physica status solidi (RRL) – Rapid Research Letters.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f3d5e191b1b4561de33eaa8bf3401932
https://doi.org/10.1002/pssr.202300039
https://doi.org/10.1002/pssr.202300039
Autor:
Vadim MORARI, Victor ZALAMAI, Emil V. RUSU, Veaceslav V. URSAKI, Pascal COLPO, Ion M. TIGINYANU
Publikováno v:
Advanced Topics in Optoelectronics, Microelectronics, and Nanotechnologies XI.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ad8187345cf538a0543e432541a08596
https://doi.org/10.1117/12.2642127
https://doi.org/10.1117/12.2642127