Zobrazeno 1 - 10
of 34
pro vyhledávání: '"V Sh Aliev"'
Publikováno v:
JETP Letters. 117:546-550
Autor:
R. M. Kh. Iskhakzay, V. N. Kruchinin, V. Sh. Aliev, V. A. Gritsenko, E. V. Dementieva, M. V. Zamoryanskaya
Publikováno v:
Russian Microelectronics. 51:24-35
Abstract Currently, a new generation of high-speed, information-intensive resistive memory based on nonstoichiometric dielectrics is being developed. The electron structure of nonstoichiometric silicon oxide SiOx is set by the value of parameter x. I
Publikováno v:
JETP Letters. 115:79-83
Autor:
Igor P. Prosvirin, Timofey V. Perevalov, R. M. Kh. Iskhakzai, Vladimir A. Gritsenko, V. Sh. Aliev
Publikováno v:
Journal of Experimental and Theoretical Physics. 131:940-944
The silicon oxide thin films obtained by thermal SiO2 treatment in hydrogen electron cyclotron resonance plasma at various exposure times are investigated. Using X-ray photoelectron spectroscopy, we have established that such treatment leads to a sig
Autor:
R. M. Kh. Iskhakzai, E. V. Spesivtsev, V. Sh. Aliev, Timofey V. Perevalov, Vladimir N. Kruchinin, Vladimir A. Gritsenko, V. A. Pustovarov
Publikováno v:
Optics and Spectroscopy. 128:1577-1582
The optical properties and composition of thermal silicon oxide thin films processed in a hydrogen electron cyclotron resonance plasma have been studied by ellipsometry, quantum-chemical modeling, and photoluminescence spectroscopy. It has been found
Publikováno v:
SN Applied Sciences. 2
The phase transformations of stoichiometric HfO2 and non-stoichiometric HfOx oxides grown by ion-beam sputtering-deposition during their electron beam crystallization were investigated. It was found that the sequences of crystalline phase formations
Autor:
Vladimir A. Gritsenko, Vladimir N. Kruchinin, A K Gerasimova, Vladimir A. Volodin, V. Sh. Aliev, Timofey V. Perevalov
Publikováno v:
Optics and Spectroscopy. 124:808-813
Optical properties of amorphous nonstoichiometric tantalum-oxide films of variable composition (TaOx, x = 1.94–2.51) in the spectral range of 1.12–4.96 eV, obtained by ion-beam sputtering-deposition of metallic tantalum at different partial oxyge
Publikováno v:
Optics and Spectroscopy. 121:241-245
Amorphous nonstoichiometric ZrOx films of different composition have been synthesized by the method of ion-beam sputtering deposition of metallic zirconium in the presence of oxygen at different partial oxygen pressures in the growth zone, and their
Autor:
A K Gerasimova, V A Voronkovskii, Timofey V. Perevalov, Vladimir A. Gritsenko, I A Prosvirin, V. Sh. Aliev, A. A. Gismatulin
Publikováno v:
Nanotechnology. 29(26)
The atomic and electronic structure of nonstoichiometric oxygen-deficient tantalum oxide TaO x
Autor:
A. P. Eliseev, A. V. Zablotskii, Timofey V. Perevalov, D. V. Gulyaev, V. Sh. Aliev, K. S. Zhuravlev, Vladimir A. Gritsenko
Publikováno v:
Physics of the Solid State. 57:1347-1351
The photoluminescence excitation and steady-state photoluminescence spectra of nonstoichiometric zirconium oxide films with a high concentration of oxygen vacancies have been investigated. A band with energy of about 2.7 eV in the blue spectral regio