Výsledky vyhledávání

Current—voltage characteristics of connecting tunnel diodes at temperature heating up to 80°C

Autor: E V Kontrosh, G V Klimko, V S Kalinovskii, V S Yuferev, N V Vaulin, B Ya Ber

Publikováno v: Journal of Physics: Conference Series. 2103:012194

Investigations of the temperature stability of the peak tunneling current density of connecting tunneling diodes, which are necessary for the creation on their basis of multijunction photoconverters of powerful optical radiation, have been carried ou

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::ae4f4cf94c317f169a756738d21455c5
https://doi.org/10.1088/1742-6596/2103/1/012194

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Peculiarities of Electrical Characteristics of Ferroelectric Memory Elements Based on PZT-Films

Autor: V. S. Yuferev, L. A. Delimova, D. S. Seregin, V. V. Ratnikov, Alexander Sergeevich Sigov, E. V. Gushchina, K. A. Vorotilov, N. V. Sharenkova, N. V. Zaitseva

Publikováno v: Russian Physics Journal. 58:1301-1305

Self-polarization directed from the top electrode to the bottom one is found in the ferroelectric Pt/PZT/Pt capacitor using the method of depolarizing hysteresis loops. We attribute the self-polarization to the flexoelectric effect caused by the mism

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::912293019ead7f190328ade3107afff1
https://doi.org/10.1007/s11182-016-0647-5

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Electrophysical Properties of Integrated Ferroelectric Capacitors Based on Sol-Gel PZT Films

Autor: D. S. Seregin, Alexander Sigov, K. A. Vorotilov, V. S. Yuferev, I. V. Grekhov, L. A. Delimova, E. V. Guschina

Publikováno v: Ferroelectrics. 484:32-42

Charge transport in integrated ferroelectric capacitors Pt/PZT/Pt/Ti/SiO2/Si is studied. The PZT films prepared with 15% of Pb excess by sol-gel deposition show the (111) textured polycrystalline structure. The current flowing through PZT grains is s

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::498956501ee387f9141c5d1e748551b1
https://doi.org/10.1080/00150193.2015.1059210

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Giant Self-Polarization in FeRAM Element Based on Sol-Gel PZT Films

Autor: N. V. Zaiceva, D. S. Seregin, V. S. Yuferev, N. V. Sharenkova, K. A. Vorotilov, Alexander Sigov, I. V. Grekhov, L. A. Delimova, E. V. Guschina

Publikováno v: MRS Proceedings. 1729:87-92

Integrated ferroelectric capacitors Pt/PZT/Pt/Ti/SiO2/Si with sol-gel deposited PZT films are studied. The (111) textured polycrystalline films are shown to have nonconductive PZT grain boundaries. The short-circuited photocurrents measured under ill

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::144cf6925fb45b27e7dedd0b6e94a04b
https://doi.org/10.1557/opl.2015.214

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Transient carrier transport and rearrangement of space charge layers under the bias applied to ferroelectric M/PZT/M structures

Autor: V. S. Yuferev, L. A. Delimova

Publikováno v: Journal of Physics: Conference Series. 1400:055003

A drift-diffusion model of unsteady carrier transport in M/PZT/M structure is proposed to account for the formation of the current peak in the current –voltage curves, which is not caused by the domain switching and observed only when the bias and

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c3920cd3c62d761d950dbf4008d09651
https://doi.org/10.1088/1742-6596/1400/5/055003

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High retention of polarization in polycrystalline M/PZT/M capacitors in the presence of depolarization field near grain boundaries

Autor: I. V. Grekhov, L. A. Delimova, V. S. Yuferev

Publikováno v: IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control. 58:2252-2258

Recently, we reported on the photovoltaic current observed in poled capacitors with polycrystalline Pb(ZrTi)O(3) (PZT) films, where (111)-oriented PZT grains are separated by an ultrathin semiconductor PbO phase. This photocurrent is driven by the de

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::9b0830d620b3f00e41e01c3dfce3c784
https://doi.org/10.1109/tuffc.2011.2075

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Transient carrier transport and rearrangement of Schottky barrier layers under the action of a bias applied to the M/PZT/M structure

Autor: V. S. Yuferev, L. A. Delimova

Publikováno v: Journal of Applied Physics. 124:184102

A drift-diffusion model of unsteady carrier transport in an M/lead zirconate titanate (PZT)/M structure is proposed. It is assumed that the PZT film has electronic conductivity. Electrons are generated by oxygen vacancies and trapped by Ti+3 deep cen

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c4c82bcb905bdcaff50c502c89f6a9b4
https://doi.org/10.1063/1.5052613

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