Zobrazeno 1 - 10
of 18
pro vyhledávání: '"V S Kalinovskii"'
Publikováno v:
Technical Physics. 67:234-241
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a8cead507842d91fe56c0be7a228e465
https://doi.org/10.1134/s1063784221070057
https://doi.org/10.1134/s1063784221070057
Publikováno v:
Journal of Materials Science. 56:15180-15187
A photovoltaic effect was observed under exposure to 810-nm laser light on the atomically clean surface of an n-GaAs wafer etched with Ar+ ions: open-circuit voltage in current–voltage (J–V) light characteristics was as high as 47 mV. The effect
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::177dddbcbca3d148f92e3915d5274679
https://doi.org/10.1007/s10853-021-06273-7
https://doi.org/10.1007/s10853-021-06273-7
Autor:
E. V. Kontrosh, Viacheslav M. Andreev, V. S. Yuferev, V. S. Kalinovskii, G. V. Klimko, D. Y. Kazantsev, Stefan Ivanov, Boris Ya. Ber
Publikováno v:
Semiconductors. 54:355-361
The creation of connecting tunnel diodes with a peak tunneling-current density higher than the density of the short-circuit current of photoactive p–n junctions is an important task in the development of multijunction photoconverters (III–V) of h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55c9fec9bca040717892d3335327f6ed
https://doi.org/10.1134/s1063782620030112
https://doi.org/10.1134/s1063782620030112
Publikováno v:
Semiconductors. 53:1922-1925
A highly defective ~10-nm-thick layer was fabricated in a high vacuum by 2.5 keV Ar+ ion bombardment of the n-GaAs surface. Valence band photoelectron spectra showed a p-type conductivity of the layer arising due to the high concentration of mechanic
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::487596f9c41a4ce607a4f08bcfcbc6b2
https://doi.org/10.1134/s1063782619140136
https://doi.org/10.1134/s1063782619140136
Publikováno v:
Technical Physics Letters. 44:1013-1016
Photovoltaic characteristics of heterostructure AlxGa1 – xAs/GaAs p–i–n photodiodes fabricated by molecular-beam epitaxy have been studied. Efficiencies of 50% were reached in conversion of monochromatic light in the photovoltaic mode at power
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b10e2bc7a98b909eb265bfa982b98646
https://doi.org/10.1134/s1063785018110214
https://doi.org/10.1134/s1063785018110214
Autor:
E. V. Kontrosh, D. A. Malevskii, N. D. Il’inskaya, M. Z. Shvarts, V. S. Kalinovskii, A. V. Malevskaya, V. M. Andreev
Publikováno v:
Technical Physics. 63:1177-1181
A multilayer system of ohmic contacts for GaAs/AlGaAs photovoltaic converters has been developed. A method of ohmic contact blackening is suggested with the aim of improving the coefficient of optical signal reflection from an Ag/Au/Ag multilayer con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be767955f85c37b7002855a162c2036a
https://doi.org/10.1134/s106378421808011x
https://doi.org/10.1134/s106378421808011x
Publikováno v:
Technical Physics Letters. 45:1197-1199
The results of the development of a radioisotope power supply source based on a semiconductor (AlxGa1 –xAs/GaAs) β-radiation energy converter and tritium as a radiation source are presented. The efficiency of this converter with a tritium saturate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8bb987972cd7f8e73542a388b2123ce
https://doi.org/10.1134/s1063785019120083
https://doi.org/10.1134/s1063785019120083
Autor:
V. B. Zalesskii, V. M. Andreev, V. I. Kuzoro, E. V. Kontrosh, V. I. Khalimanovich, V. S. Kalinovskii, A. V. Andreeva, V. V. Malyutina-Bronskaya, M. K. Zaitseva, A. M. Lemeshevskaya
Publikováno v:
Technical Physics Letters. 45:850-852
Hybrid solar cells based on InGaP/Ga(In)As/Ge multijunction structures integrated into crystalline Si heat-removal base and provided with sunlight concentrator system based on linear Fresnel lenses and carboplastic mount structure have been developed
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::414f0a46d8f0d1b795d3464c74aaa86c
https://doi.org/10.1134/s1063785019080236
https://doi.org/10.1134/s1063785019080236
Publikováno v:
Journal of Physics: Conference Series. 2103:012194
Investigations of the temperature stability of the peak tunneling current density of connecting tunneling diodes, which are necessary for the creation on their basis of multijunction photoconverters of powerful optical radiation, have been carried ou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae4f4cf94c317f169a756738d21455c5
https://doi.org/10.1088/1742-6596/2103/1/012194
https://doi.org/10.1088/1742-6596/2103/1/012194
Autor:
V. S. Kalinovskii, A. E. Marichev, E. V. Kontrosh, N. D. Prasolov, B. V. Pushnyi, R. V. Levin
Publikováno v:
Technical Physics Letters. 44:1130-1132
Some results of studies on the creation of new junction elements for application in monolithic multijunction InP based photovoltaic cells are presented. A new type of junction elements with a specific ohmic resistance of less than 2 mΩ cm2 within a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b7b8906f10f26141a3dc7a8afed26ab7
https://doi.org/10.1134/s1063785018120490
https://doi.org/10.1134/s1063785018120490