Zobrazeno 1 - 10
of 48
pro vyhledávání: '"V R Stempitsky"'
Autor:
V. S. Volcheck, V. R. Stempitsky
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 22, Iss 3, Pp 69-75 (2024)
A simulation procedure for analyzing the electrical and optical characteristics of an AlGaN/GaN intersubbandquantum well middle-wavelength infrared photodetector is presented. The photoconductive gain spectrumwas simulated by coupling the drift-diffu
Externí odkaz:
https://doaj.org/article/2bec6bff899849a2961909fb2cdf380d
Autor:
Van Trieu Tran, K. V. Korsak, P. E. Novikov, I. Yu. Lovshenko, S. M. Zavadski, D. A. Golosov, A. A. Stepanov, A. А. Hubarevich, V. V. Kolos, Ya. A. Solovjov, D. S. Liauchuk, V. R. Stempitsky
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 21, Iss 6, Pp 84-91 (2024)
Determination of optical, mechanical and electrical characteristics is one of the decisive factors in the design of instrumentation structures of thermal uncooled bolometer-type detectors (microbolometers). The paper presents the results of optimizat
Externí odkaz:
https://doaj.org/article/1b17effb8f2f429681dc336325a7556f
Autor:
Van Trieu Tran, K. V. Korsak, P. E. Novikov, I. Yu. Lovshenko, S. M. Zavadski, D. A. Golosov, A. A. Stepanov, A. A. Hubarevich, V. V. Kolos, Ya. A. Solovjov, D. S. Liauchuk, V. R. Stempitsky
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 21, Iss 5, Pp 73-80 (2023)
The increased interest in utilizing uncooled thermal bolometer-type detectors (microbolometers) within the infrared or terahertz detection field is justified by their operational and technological characteristics, in particular: relatively low manufa
Externí odkaz:
https://doaj.org/article/c91b6b3675f945d59ace4d1514b04080
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 21, Iss 2, Pp 77-85 (2023)
Uncooled bolometric type thermal detectors, combined into a matrix and placed into a focal plane array have the following characteristics: low cost, operation at room temperature, compatibility with the silicon CMOS technology, and high detecting per
Externí odkaz:
https://doaj.org/article/4edac00829f5467ca764349bca7686c5
Autor:
Tran Van Trieu, I. Yu. Lovshenko, V. R. Stempitsky, K. V. Korsak, Tran Tuan Trung, Dao Dinh Ha, V. V. Kolos
Publikováno v:
Цифровая трансформация, Vol 29, Iss 1, Pp 72-80 (2023)
A comparative analysis of the characteristics of the main types of bolometers is indicated in the article. The constructive solution of an uncooled thermal detector of the bolometric type, formed using the technology of microelectromechanical systems
Externí odkaz:
https://doaj.org/article/6032fb1b2d2c4837b9e586875d8696dd
Autor:
V. S. Volcheck, V. R. Stempitsky
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 20, Iss 1, Pp 40-47 (2022)
The self-heating effect exerts a considerable influence on the characteristics of high-power electronic and optoelectronic devices based on gallium nitride. An extremely non-uniform distribution of the dissipated power and a rise in the average tempe
Externí odkaz:
https://doaj.org/article/26bbe57c5e754a5da5c10bcca22ce9f7
Autor:
I. Yu. Lovshenko, A. Yu. Voronov, P. S. Roshchenko, R. E. Ternov, Ya. D. Galkin, A. V. Kunts, V. R. Stempitsky, Jinshun Bi
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 19, Iss 8, Pp 81-86 (2022)
The results of the simulation the influence of the proton flux on the electrical characteristics of the device structure of dual-channel high electron mobility field effect transistor based on GaAs are presented. The dependences of the drain current
Externí odkaz:
https://doaj.org/article/90674db11cc94aa191230d8e13bcc40f
Autor:
V. S. Volcheck, V. R. Stempitsky
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 19, Iss 6, Pp 74-82 (2021)
The self-heating effect poses a main problem for high-power electronic and optoelectronic devices based on gallium nitride. A non-uniform distribution of the dissipated power and a rise of the average temperature inside the gallium nitride heterostru
Externí odkaz:
https://doaj.org/article/4002ff597aca4505943cf51312911f19
Autor:
V. S. Volcheck, V. R. Stempitsky
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 8, Pp 62-68 (2020)
A significant rise in the mass production of products that contain nanoparticles is of growing concern due to the detection of their toxic effects on living organisms. The standard method for analyzing the toxicity of substances, including nanomateri
Externí odkaz:
https://doaj.org/article/cbb0dbb2a6724b10b42c6ecf2460c542
Publikováno v:
Doklady Belorusskogo gosudarstvennogo universiteta informatiki i radioèlektroniki, Vol 18, Iss 7, Pp 55-62 (2020)
The use of microelectronic products in outer space is possible if protection is provided against special external influencing factors, including radiation effect. For digital integrated circuits manufactured using submicron CMOS processes, the greate
Externí odkaz:
https://doaj.org/article/991d6f1a5d11414ebeb19989a8bebc80