Zobrazeno 1 - 10
of 156
pro vyhledávání: '"V P Konyaev"'
Publikováno v:
Quantum Electronics. 49:905-908
Autor:
A. V. Lobintsov, V V Krichevskii, Yu V Kurnyavko, T. A. Bagaev, Nikita A. Pikhtin, V P Konyaev, S. M. Sapozhnikov, A. A. Podoskin, V. A. Simakov, A. A. Marmalyuk, A. I. Danilov, A A Padalitsa, Sergey O. Slipchenko, Maxim A. Ladugin
Publikováno v:
Quantum Electronics. 50:1001-1003
A triple laser – thyristor, i. e., a semiconductor laser with three emitting sections monolithically integrated with an electronic switch (thyristor) is experimentally studied. For comparison, the output characteristics of single and double laser
Autor:
A. V. Lobintsov, A A Padalitsa, Sergey O. Slipchenko, S. M. Sapozhnikov, Nikita A. Pikhtin, V P Konyaev, A. I. Danilov, A. A. Marmalyuk, T. A. Bagaev, Yu V Kurnyavko, V. A. Simakov, A. A. Podoskin, V V Krichevskii, M. V. Zverkov, Maxim A. Ladugin
Publikováno v:
Quantum Electronics. 49:1011-1013
Comparative experiments are performed on a semiconductor laser with different numbers (one or two) of emitting sections monolithically integrated with an electronic switch (thyristor). It is shown that the functional integration of a laser with a thy
Autor:
T. A. Bagaev, Yu P Koval, Maxim A. Ladugin, S. M. Sapozhnikov, A. V. Lobintsov, V P Konyaev, V. A. Simakov, A. A. Marmalyuk
Publikováno v:
Quantum Electronics. 48:993-995
Autor:
T. A. Bagaev, A. A. Padalitsa, V. V. Krichevsky, S. M. Sapozhnikov, M. V. Zverkov, V. A. Simakov, Maxim A. Ladugin, A. A. Marmalyuk, V P Konyaev
Publikováno v:
Semiconductors. 48:99-103
The results of studying single laser diodes and arrays in the spectral range of 900–1060 nm, fabricated based on InGaAs/AlGaAs epitaxially integrated heterostructures are presented. It is shown that the use of InGaAs/AlGaAs epitaxially integrated h
Autor:
K. Yu. Telegin, S. M. Sapozhnikov, A. N. Morozyuk, I. V. Yarotskaya, V P Konyaev, A. S. Meshkov, A. I. Danilov, V. A. Simakov, A. Yu. Andreev, E I Lebedeva, A. A. Marmalyuk, Maxim A. Ladugin
Publikováno v:
Semiconductors. 48:115-119
AlGaAs/GaAs laser heterostructures with various active-region geometries, namely, with broadened asymmetric and narrow symmetric waveguides, and with various depths of quantum wells, are obtained by MOC hydride epitaxy. Single laser elements, bars, a
Autor:
Aleksandr A Marmalyuk, V. A. Simakov, T. A. Bagaev, M. V. Zverkov, Sergey O. Slipchenko, Nikita A. Pikhtin, V P Konyaev, A. A. Padalitsa, Maxim A. Ladugin, I. S. Tarasov, Yuriy V. Kurniavko, Aleksandr A. Podoskin, A. V. Rozhkov
Publikováno v:
IEEE Photonics Technology Letters. 25:1664-1667
High-power pulse semiconductor lasers based on epitaxially integrated thyristor heterostructures were developed. The possibility of generating high-power laser light pulses with duration on the order of 100 ns at control signal amplitude on the order
Autor:
M. V. Zverkov, M. A. Ladugin, V. A. Simakov, V. V. Krichevsky, S. M. Sapozhnikov, I. S. Tarasov, Nikita A. Pikhtin, I. V. Yarotskaya, V. P. Konyaev, M. B. Uspenskiy, A. A. Marmalyuk, Evgeniya I Davydova, E I Lebedeva, S V Petrov
Publikováno v:
Semiconductors. 45:519-525
The results of a series of studies concerned with formation of epitaxially integrated InGaAs/AlGaAs and AlGaAs/AlGaAs heterostructures with several emitting regions and with investigation of properties of laser diodes based on the above structures op
Publikováno v:
Quantum Electronics. 41:99-102
Relations for estimating the reliability of heterolasers operating under irradiation conditions are calculated based on the probabilistic analysis. The accumulation of defects in their active regions is considered to be the physical cause of their fa
Autor:
V. P. Konyaev, A. A. Podoskin, I. S. Tarasov, T. A. Bagaev, V. V. Zolotarev, A. A. Padalitsa, A. V. Lobintsov, A. V. Jabotinskii, Sergey O. Slipchenko, D. A. Veselov, V. V. Vasil’eva, A. V. Gorbatyuk, A. A. Marmalyuk, Y. V. Kurniavko, M. V. Zverkov, A. V. Rozhkov, A. A. Petukhov, M. A. Ladugin, Nikita A. Pikhtin, V. A. Simakov
Publikováno v:
Semiconductors. 48:697-699
A high power laser-thyristor structure providing low current-related and optical losses is developed. The possibility of controlling the lasing turn-on delay time of the laser thyristor in the 8–2600 ns range is demonstrated. The minimum values of