Zobrazeno 1 - 10
of 55
pro vyhledávání: '"V P Khvostikov"'
Publikováno v:
Semiconductors. 55:840-843
Publikováno v:
Technical Physics. 65:2026-2030
Secondary optical concentrators (focons) designed to operate in a solar concentrator photovoltaic module with Fresnel lenses have been developed and investigated. Both volumetric refractive concentrators and concentrators with internal reflective sur
Autor:
M. Z. Shvarts, V. P. Khvostikov, Nikolay A. Kalyuzhnyy, S. V. Sorokina, Sergey A. Mintairov, N. S. Potapovich, O. A. Khvostikova
Publikováno v:
Technical Physics. 65:1690-1694
We consider a high-efficiency photovoltaic module optimized for conversion of monochromatic radiation with a wavelength of 809–850 nm. The module includes four photovoltaic converters with a total area of 16 cm2, which operate with laser radiation
Publikováno v:
Technical Physics Letters. 45:1197-1199
The results of the development of a radioisotope power supply source based on a semiconductor (AlxGa1 –xAs/GaAs) β-radiation energy converter and tritium as a radiation source are presented. The efficiency of this converter with a tritium saturate
Autor:
Sergey A. Mintairov, N. S. Potapovich, V. P. Khvostikov, M. Z. Shvarts, Nikolay A. Kalyuzhnyy, S. V. Sorokina
Publikováno v:
Semiconductors. 53:1110-1113
The results of a study and the development of a module designed for energy transmission via atmospheric channels are presented. The four-cell module based on single-junction metamorphic InGaAs/GaAs converters grown by metal-organic vapor-phase epitax
Autor:
V. M. Andreev, S. V. Sorokina, N. S. Potapovich, A. S. Vlasov, O. A. Khvostikova, M. Z. Shvarts, V. S. Kalinovskiy, V. P. Khvostikov
Publikováno v:
Semiconductors. 52:1754-1757
Electrical supply sources based on photovoltaic converters and tritium radioluminescent lamps with blue and green glow are developed and fabricated. AlxGa1 –xAs/n-GaAs p–n heterostructures with various band-gap widths (Eg = 1.4–1.9 eV) and comp
Autor:
N. Kh. Timoshina, S. V. Sorokina, B. V. Pushnyi, R. V. Levin, A. E. Marichev, V. P. Khvostikov, N. S. Potapovich
Publikováno v:
Semiconductors. 52:1748-1753
Photovoltaic laser-power converters with irradiation of the substrate side are developed based on lattice-matched GaInAs/InP heterostructures formed by metal-organic vapor-phase epitaxy. Variants of antireflection coatings with a reflection minimum a
Autor:
M. Z. Shvarts, N. S. Potapovich, O. A. Khvostikova, S. V. Sorokina, N. Kh. Timoshina, V. P. Khvostikov
Publikováno v:
Semiconductors. 52:366-370
Laser-power converters for the wavelength λ = 808 nm are fabricated by liquid-phase epitaxy (LPE) on the basis of n-Al0.07GaAs–p-Al0.07GaAs–p-Al0.25GaAs single-junction heterostructures. The converters are tested with uniform (pulse simulator) a
Autor:
V. V. Andryushkin, A. G. Gladyshev, A. V. Babichev, E. S. Kolodeznyi, I. I. Novikov, L. Ya. Karachinsky, S. S. Rochas, N. A. Maleev, V. P. Khvostikov, B. Ya. Ber, A. G. Kuzmenkov, S. S. Kizhaev, V. E. Bougrov
Publikováno v:
Journal of Optical Technology. 88:742
Autor:
V V Andryushkin, A G Gladyshev, A V Babichev, E S Kolodeznyi, I I Novikov, L Ya Karachinsky, N A Maleev, V P Khvostikov, B Ya Ber, A G Kuzmenkov, S S Kizhaev, V E Bougrov
Publikováno v:
Journal of Physics: Conference Series. 2103:012184
This paper presents a study of Zn diffusion process into InP and InGaAs/InP epitaxial heterostructures grown by molecular beam epitaxy. It was found that both diffusion systems: a resistively heated quartz reactor with a solid-state Zn vapor source p