Core-shell InGaN Nanowires: MBE Growth and Properties

Autor: V. O. Gridchin, R. R. Reznik, K. P. Kotlyar, V. V. Lendyashova, A. S. Dragunova, D. A. Kirilenko, N.V. Kryzhanovskaya, G. E. Cirlin

Publikováno v: 2022 International Conference Laser Optics (ICLO).

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a498e4a9c9966c0b45fcc45577e954a9
https://doi.org/10.1109/iclo54117.2022.9839836

III-V nanowires with quantum dots: MBE growth and properties

Autor: V O Gridchin, K. P. Kotlyar, G. E. Cirlin, A. I. Khrebtov, Igor V. Ilkiv, Rodion R. Reznik, L Leandro, Nika Akopian, N. V. Kryzhanovskaya, I. P. Soshnikov, Yu. B. Samsonenko

Publikováno v: Reznik, R R, Kotlyar, K P, Gridchin, V O, Ilkiv, I V, Khrebtov, A I, Samsonenko, Y B, Soshnikov, I P, Kryzhanovskaya, N V, Leandro, L, Akopian, N & Cirlin, G E 2021, ' III-V nanowires with quantum dots: MBE growth and properties ', Journal of Physics: Conference Series, vol. 2015, no. 1, 012124 . https://doi.org/10.1088/1742-6596/2015/1/012124

We demonstrate growth of AlGaAs NWs with GaAs QDs and InP NWs with InAsP QDs on silicon substrates. Results of GaAs QDs optical properties study have shown that these objects are sources of single photons. In case of InP NWs with InAsP QDs, the resul

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1e9724d7a6792f91054fe76c2c03d798
https://orbit.dtu.dk/en/publications/40b99544-ecbf-41fa-b6f9-c8da135cb126

Morphology transformation of InGaN nanowires grown on Si substrate by PA-MBE

Autor: V O Gridchin, A S Dragunova, K P Kotlyar, R R Reznik, S D Komarov, N V Kryzhanovskaya, I P Soshnikov, Yu B Samsonenko, G E Cirlin

Publikováno v: Journal of Physics: Conference Series. 2086:012013

The influence of the growth time on the structural properties of InGaN nanowires grown on Si substrate by plasma-assisted molecular beam epitaxy are studied. Under appropriate other growth conditions, the growth for 2h leads to the formation of separ

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::c3b6a18da5c695a67eb39b884974ab4d
https://doi.org/10.1088/1742-6596/2086/1/012013

Effect of wet KOH etching on structural properties of GaN nanowires grown on patterned SiOx/Si substrates

Autor: V V Lendyashova, K P Kotlyar, V O Gridchin, R R Reznik, A I Lihachev, I P Soshnikov, G E Cirlin

Publikováno v: Journal of Physics: Conference Series. 2103:012098

The possibility of the controlled removal of GaN nanowires (NWs) from an SiOx inhibitor layer of patterned SiOx/Si substrates has been demonstrated. It has been found that the wet KOH etching preserves the selectively grown GaN NWs on Si surface, whe

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::5bc49127898efc8fffdce747e3a172bf
https://doi.org/10.1088/1742-6596/2103/1/012098

Selective-area growth and optical properties of GaN nanowires on patterned SiOx/Si substrates

Autor: L N Dvoretckaia, V. O. Gridchin, N V Kryzhanovskaya, K P Kotlyar, A. V. Parfen’eva, Ivan Mukhin, D S Shevchuk, G. E. Cirlin, R. R. Reznik, A S Dragunova

Publikováno v: Journal of Physics: Conference Series. 1851:012006

We present the results of selective-area growth of GaN nanowires by molecular beam epitaxy on patterned SiOx/Si substrates without using seed layers. The morphological and optical properties of selectively grown GaN nanowires are compared to the prop

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::1ed1370e345e8e2aeded065e5d214710
https://doi.org/10.1088/1742-6596/1851/1/012006