Zobrazeno 1 - 10
of 36
pro vyhledávání: '"V N Trushin"'
Autor:
M. V. Dorokhin, A. V. Zdoroveyshchev, I. V. Erofeeva, A. A. Popov, Yu. M. Kuznetsov, V. N. Trushin, E.A. Uskova, P. B. Demina, E. A. Lantsev, Maksim Boldin
Publikováno v:
Nanosystems: Physics, Chemistry, Mathematics. 11:680-684
Publikováno v:
Instruments and Experimental Techniques. 62:703-707
The possibility of controlling the curvature of the profiles of the surface of X-ray optical elements using single-crystal SiO2(011) plates of rectangular and trapezoidal shapes was studied. In bending regulators (BRs) of various forms, the active el
Autor:
G. I. Kotov, V. N. Trushin, A. V. Zdoroveyshchev, P. B. Demina, A. V. Budanov, B. N. Zvonkov, Yu. N. Vlasov, M. V. Dorokhin
Publikováno v:
Technical Physics Letters. 45:235-238
Spin light-emitting diodes based on InGaAs/GaAs heterostructures with a CoPt ferromagnetic injector were fabricated. It was demonstrated that the processing of these structures in selenium vapor prior to the deposition of a CoPt contact provides an o
Autor:
N. Yu. Tabachkova, I. V. Erofeeva, Maksim Boldin, M. V. Ved, M. V. Dorokhin, Yu. M. Kuznetsov, A. V. Boryakov, P. B. Demina, Eugene B. Yakimov, V. N. Trushin, O. V. Vikhrova, Aleksey Nezhdanov, E. A. Lantsev, V. A. Gavva, A. A. Popov
Publikováno v:
RSC Advances. 9:16746-16753
A bulk nanostructured material based on oxidized silicon nanopowder was fabricated using a spark plasma sintering technique. Structural investigations revealed that this material has the composition of ∼14 nm core Si granules inside an SiO2 shell.
Autor:
V. G. Shengurov, A. V. Zaitsev, D. A. Pavlov, Aleksey Nezhdanov, V. N. Trushin, D. O. Filatov, S. A. Denisov, V. Yu. Chalkov
Publikováno v:
Journal of Crystal Growth. 578:126421
We report on the investigation of the growth defect formation in the GeSn/Ge/Si(001) epitaxial layers grown by hot wire chemical vapor deposition of Ge with simultaneous co-evaporation of Sn from an effusion cell. The nucleation of α -Sn nanoinclusi
Autor:
A. A. Popov, A. V. Zdoroveyshchev, A. V. Boryakov, M. V. Dorokhin, I. V. Erofeeva, E. A. Lantsev, P. B. Demina, Maksim Boldin, V. N. Trushin, Yu. M. Kuznetsov, N.V. Sakharov
Publikováno v:
Nanosystems: Physics, Chemistry, Mathematics. 9:622-630
Autor:
Yu. I. Chigirinskii, V. V. Sdobnyakov, V. P. Lesnikov, N. V. Sakharov, Yu. A. Dudin, Maksim Boldin, V. N. Trushin, G. V. Vazenmiller, A. A. Bobrov, O. A. Belkin, E. S. Demidov
Publikováno v:
Technical Physics. 63:1002-1005
The paper presents a method for manufacturing mechanically strong sputtering composite targets containing the phase of the Co2FeSi or Co2MnSi Heusler alloy of the stoichiometric composition, which can be used for fabrication of spin electronic device
Publikováno v:
Instruments and Experimental Techniques. 61:148-152
The possibility of forming specified surface profiles of X-ray optics elements (XROEs) for focusing and collimation of X-ray beams is considered. It is shown that the curvature of these elements can be controlled by varying the temperature of curvatu
Autor:
A A Nikolskaya, D S Korolev, A N Mikhaylov, T D Mullagaliev, Yu I Chigirinsky, A I Belov, A V Nezhdanov, V N Trushin, D E Nikolichev, A V Almaev, R Giulian, M Kumar, D I Tetelbaum
Publikováno v:
Journal of Physics: Conference Series. 2103:012062
Synthesis and modification of gallium oxide as a wide-bandgap semiconductor is a topical task in the fields of power electronics, UV detectors, gas sensors, telecommunication. In the present work, the Ga2O3 films deposited on sapphire substrates by m
Publikováno v:
Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques. 11:505-509
The possibility of interactively controlling the surface curvature of a single-crystal Si(100) plate used as a diffraction element is investigated. The initial component-surface profile is specified by the substrate shape, parameters of the adhesive,