Zobrazeno 1 - 6
of 6
pro vyhledávání: '"V N Baranova"'
Autor:
D. O. Filatov, Ivan Antonov, O. N. Gorshkov, Alexey Belov, V. N. Baranova, D. A. Antonov, M. E. Shenina
Publikováno v:
Physics of the Solid State. 62:642-647
The specific features of resistive switching, which was initiated by triangular pulses with a high-frequency sine signal imposed on them, in experimental memristor prototypes based on thin films of yttria-stabilized zirconia were examined. It was fou
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7169e76e528d7123ca7ffa7b3cebf0b6
https://doi.org/10.1134/s1063783420040083
https://doi.org/10.1134/s1063783420040083
Publikováno v:
Semiconductors. 54:1830-1832
We report on a comparative study of resistive switching in the memristors based on ZrO2(Y) films and on ZrO2(Y)/Ta2O5 bilayer stacks by triangle voltage pulses with superimposed high-frequency sinusoidal signal. The dependencies of the current differ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::937a1befc1fd45ef5dfb1a50f8bac496
https://doi.org/10.1134/s1063782620140031
https://doi.org/10.1134/s1063782620140031
Autor:
O. N. Gorshkov, A. V. Zdoroveyshchev, A. V. Kruglov, Bernardo Spagnolo, Angelo Carollo, M. N. Koryazhkina, Dmitry Filatov, A. S. Novikov, Alexander A. Dubkov, Ivan Antonov, V. N. Baranova, D. A. Antonov
We report on the results of the experimental investigations of the local resistive switching (RS) in the contact of a conductive atomic force microscope (CAFM) probe to a nanometer-thick yttria stabilized zirconia (YSZ) film on a conductive substrate
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::c126f9db7af9ad1ad42cc422f9415b02
http://hdl.handle.net/10447/408144
http://hdl.handle.net/10447/408144
Autor:
M A Ryabova, D O Filatov, M E Shenina, M N Koryazhkina, I N Antonov, V N Baranova, O N Gorshkov
Publikováno v:
Journal of Physics: Conference Series. 2227:012020
The resonant activation of resistance switching (RS) of a memristor based on an yttria stabilized zirconia (YSZ) film with embedded Au nanoparticles (NPs) was investigated. The switching was made by triangular pulses with high frequency (HF) sinusoid
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7f5d4e154761b8d90c42b90316ae731f
https://doi.org/10.1088/1742-6596/2227/1/012020
https://doi.org/10.1088/1742-6596/2227/1/012020
Publikováno v:
Journal of Physics: Conference Series. 1695:012151
We report on a comparative study of resistive switching in the memristors based on ZrO2(Y) films and on ZrO2(Y)/Ta2O5 bilayer stacks by triangle voltage pulses with superimposed high-frequency sinusoidal signal. The dependencies of the current differ
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b4d0c4d4b6b47bab422d6571718c421e
https://doi.org/10.1088/1742-6596/1695/1/012151
https://doi.org/10.1088/1742-6596/1695/1/012151
Autor:
D O Filatov, A S Novikov, V N Baranova, D A Antonov, A V Kruglov, I N Antonov, A V Zdoroveyshchev, M N Koryazhkina, O N Gorshkov, A A Dubkov, A Carollo, B Spagnolo
Publikováno v:
Journal of Statistical Mechanics: Theory & Experiment; Feb2020, Vol. 2020 Issue 2, p1-1, 1p