Zobrazeno 1 - 10
of 345
pro vyhledávání: '"V Metz"'
Autor:
Michael V. Metz
In 1969, the campus tumult that defined the Sixties reached a flash point at the University of Illinois. Out-of-town radicals preached armed revolution. Students took to the streets and fought police and National Guardsmen. Firebombs were planted in
Autor:
Carl H. Naylor, Chelsey Dorow, O'brien Kevin P, Kirby Maxey, Arnab Sen Gupta, Andy Hsiao, Tronic Tristan A, Penumatcha Ashish Verma, Scott B. Clendenning, Gosavi Tanay, Matthew V. Metz, Michael Christenson, Sudarat Lee, Robert L. Bristol, Uygar E. Avci, Alaan Urusa, A. A. Oni, Hui Zhu
Publikováno v:
IEEE Transactions on Electron Devices. 68:6592-6598
2-D-material channels enable ultimate scaling of MOSFET transistors and will help Moore's Law scaling for years. We demonstrate the state of both n- and p-MOSFETs using monolayer transition metal dichalcogenide (TMD) channels of sub-1 nm thickness an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d41c0f0bcfb98257799a5d37068b6f06
https://doi.org/10.1109/ted.2021.3118659
https://doi.org/10.1109/ted.2021.3118659
Publikováno v:
Journal of Nuclear Materials. 570:153953
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::88f5bdd93c133d71b27373ae80fe951b
https://doi.org/10.1016/j.jnucmat.2022.153953
https://doi.org/10.1016/j.jnucmat.2022.153953
Publikováno v:
La Revue de Médecine Interne. 40:670-676
Oxygen therapy is used to reverse hypoxemia since more than a century. Current usage is broader and includes routine oxygen administration despite normoxemia which may result in prolonged periods of hyperoxemia. While systematic oxygen therapy was ex
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6f8d4f09aad7437e12467a779f0f457f
https://doi.org/10.1016/j.revmed.2019.04.003
https://doi.org/10.1016/j.revmed.2019.04.003
Autor:
Manan Mehta, Merrill Devin, S. Ghose, X. Weng, H. Li, Anand Portland Murthy, Ashish Agrawal, Jessica M. Torres, Matthew V. Metz, A. A. Oni, S. Vishwanath, Chouksey Siddharth, Jack Portland Kavalieros, W. Rachmady
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
For the first time, we report a short channel high performance, gate-all-around strained Si 0.4 Ge 0.6 nanosheet PMOSFET with aggressively scaled dimensions. We demonstrate realization of s-Si 0.4 Ge 0.6 nanosheet with 5nm thickness and device with L
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35498837c30fca8c31f46f4d41660aa6
https://doi.org/10.1109/iedm13553.2020.9371933
https://doi.org/10.1109/iedm13553.2020.9371933
Autor:
Prashant Majhi, Le Van H, Tung I-Cheng, Brian S. Doyle, Yoo Hui Jae, Tobias L Brown-Heft, Yu-Jin Chen, Abhishek Sharma, Miriam Reshotko, Jack T. Kavalieros, Matthew V. Metz
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
Scaled ferroelectric transistors (L g =76 nm) in a back- gated configuration are fabricated with a channel-last process flow. Using this approach, optimization of the ferroelectric gate oxide film can be decoupled from that of the semiconductor chann
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ee352181ccb4c904d5779e075a9ad290
https://doi.org/10.1109/iedm13553.2020.9371940
https://doi.org/10.1109/iedm13553.2020.9371940
Autor:
W. Rachmady, Phan Anh, G. Dewey, P. Nguyen, Matthew V. Metz, Tung I-Cheng, Patrick Morrow, Rajat Kanti Paul, Scott B. Clendenning, Nicole K. Thomas, A. A. Oni, Ryan Keech, Marko Radosavljevic, Huang Cheng-Ying, Alaan Urusa, Manan Mehta, Kang Jun Sung, A. Lilak, Mannebach Ehren, Hui Jae Yoo, Bob Turkot, Kabir Nafees, S. Vishwanath, K. L. Cheong, Richard E. Schenker, B. Krist, Michael K. Harper, Jack Portland Kavalieros
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
We demonstrate 3-D self-aligned stacked NMOS-on-PMOS multiple Si nanoribbon transistors with successful integration of vertically stacked dual source/drain EPI process and vertically stacked dual metal gate process. Both top NMOS and bottom PMOS show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::df2fecb4c1020f6a74997a8120152a6c
https://doi.org/10.1109/iedm13553.2020.9372066
https://doi.org/10.1109/iedm13553.2020.9372066
Autor:
Matthew V. Metz, James S. Clarke, Mauro J. Kobrinsky, J. Bielefeld, Ramanan V. Chebiam, Marius K. Orlowski, Sean W. King, Carl H. Naylor, S. Vyas, John J. Plombon, R. Thapa, Vamseedhara Vemuri, James M. Blackwell, Ye Fan, David J. Michalak, Florian Gstrein, Nicholas C. Strandwitz, Michelle M. Paquette
Publikováno v:
2020 IEEE International Electron Devices Meeting (IEDM).
The remarkable advancement of CMOS electronics over the past two decades has been greatly aided by innovations allowing dielectric scaling across both ends of the permittivity spectrum. This paper describes how new dielectric innovations beyond permi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::27238ad25a90f959569d7043165c8afd
https://doi.org/10.1109/iedm13553.2020.9371942
https://doi.org/10.1109/iedm13553.2020.9371942
Publikováno v:
PLoS ONE, Vol 7, Iss 7, p e41823 (2012)
The multiligand Receptor for Advanced Glycation End products (RAGE) is involved in various pathophysiological processes, including diabetic inflammatory conditions and Alzheimers disease. Full-length RAGE, a cell surface-located type I membrane prote
Externí odkaz:
https://doaj.org/article/ee4a93b9dc23477493ded4f747a8bb7e
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