Zobrazeno 1 - 10
of 25
pro vyhledávání: '"V M Chetverikov"'
Publikováno v:
Voprosy statistiki. 28:45-66
The article discusses specifc issues of the reliability of statistics on the spread of the coronavirus pandemic and the comparability of similar statistics across different countries. All countries faced challenges, regardless of the level of well-b
Autor:
V. M. Chetverikov
Publikováno v:
Voprosy statistiki. 27:86-104
The article focuses on determining the unique features and intensity of Covid-19 spread in large economies, using mathematical and statistical tools According to international statistics and using the example of 24 countries, each producing more than
Autor:
V. M. Chetverikov
Publikováno v:
Moscow University Physics Bulletin. 73:592-598
A model for the description of the distribution of magnetization across the thickness of a ferromagnetic semiconductor film is considered. Applying a constant electric field perpendicular to the film surface makes it possible to change the Curie temp
Publikováno v:
Polymer Science Series A. 56:152-157
General questions about hole transport and bimolecular recombination of charge carriers in molecularly doped polycarbonate with a low dopant concentration (10 wt %) are considered. The experiment is performed via a radiation-induced time-of-flight te
Autor:
V M Chetverikov, A E Aminova
Publikováno v:
Journal of Physics: Conference Series. 1163:012078
The results of numerical calculations for the mathematical model proposed for describing the magnetization in a thin film of a ferromagnetic semiconductor at temperatures below the Curie temperature in the presence of an external electric field are p
Autor:
V. M. Chetverikov
Publikováno v:
Journal of Physics: Conference Series. 1163:012077
Autor:
V. M. Chetverikov
Publikováno v:
Journal of Physics: Conference Series. 955:012025
Publikováno v:
2013 International Conference on Adaptive Science and Technology.
We find and investigate the effect of an anomalous increase in the relative dielectric permittivity of a model composite dielectric consisting of a binder (paraffin) and a filler (100 nm particles of technical carbon). It is shown that the relative d
Publikováno v:
Journal of Applied Physics. 69:5336-5336
One of the problems arising in the development of VBL memory is to make stripe domains (SD) resistant to bending distortions. The paper considers a theoretical and experimental study of the mechanism of bending sinusoidal distortions of isolated SD c
Autor:
V. M. Chetverikov
Publikováno v:
Journal de Physique. 50:1163-1166
Complete Slonczewski equations for a ferromagnetic bubble film which describe the dynamics of almost plane domain wall (DW) with Bloch lines are given. Numerical analysis of the vertical Bloch lines (VBL) dynamics within the frame work of shortened S