Zobrazeno 1 - 10
of 46
pro vyhledávání: '"V L Bonch-Bruevich"'
Publikováno v:
Physica Status Solidi (b). 96:271-278
Binary correlation functions are considered of the random fields produced by various types of atomic disorder in amorphous, liquid, and glassy semiconductors, both homopolar and heteropolar. Conditions are established under which the field may be con
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a813da80dd60cc29ef5cc2266888eea8
https://doi.org/10.1002/pssb.2220960128
https://doi.org/10.1002/pssb.2220960128
Autor:
V. L. Bonch-Bruevich
Publikováno v:
Journal of Structural Chemistry. 24:606-609
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3475ea0a7c4e6eb5c8114f3e1d1694ec
https://doi.org/10.1007/bf00748121
https://doi.org/10.1007/bf00748121
Autor:
V L Bonch-Bruevich
Publikováno v:
Physica Scripta. :491-497
A review is given of recent experimental and theoretical work on electrical instabilities in semiconductors. Particular attention is paid to the conditions under which stochastic self-oscillations arise of the electric field strength, concentration o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7765e2bb31554fc17afcd4b1ff38090f
https://doi.org/10.1088/0031-8949/1987/t19b/028
https://doi.org/10.1088/0031-8949/1987/t19b/028
Autor:
V. L. Bonch-Bruevich
Publikováno v:
physica status solidi (b). 136:207-210
The types of solutions are studied of the non-linear one-dimensional problem of an electron interacting with acoustic phonons. Conditions are established under which the set of solutions is a fractal. Es werden Losungsvarianten des nichtlinearen eind
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1ec4c5ef8422862bbaf1f55abe7feb85
https://doi.org/10.1002/pssb.2221360123
https://doi.org/10.1002/pssb.2221360123
Autor:
V. L. Bonch-Bruevich, A.G. Mironov
Publikováno v:
Le Journal de Physique Colloques. 42:C4-33
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::035daa715367a5d18a0e1eced46572a2
https://doi.org/10.1051/jphyscol:1981404
https://doi.org/10.1051/jphyscol:1981404
Autor:
V. L. Bonch-Bruevich
Publikováno v:
Journal of Structural Chemistry. 27:988-997
This paper is an expanded version of a report read by the author at the 2nd All-Union Conference on Quantum chemistry of Solids (Riga, 1985) and at the 9th Session of Physics and Electronics (German Democratic Republic, Berlin, 1985). Three questions
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::784e704a78a81791660779bd4742cdbe
https://doi.org/10.1007/bf00755215
https://doi.org/10.1007/bf00755215
Autor:
A. G. Mironov, V. L. Bonch-Bruevich
Publikováno v:
physica status solidi (b). 114:715-719
Renormalization group method is extended to take account of the correlation between the energy levels. It is shown that in a d = 2 system, as contrasted to d = 1 and d = 3, all or not all levels are localized depending upon some dynamical properties
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::47c4783350e792c17a7eb1b85fb609ec
https://doi.org/10.1002/pssb.2221140250
https://doi.org/10.1002/pssb.2221140250
Autor:
V. D. Iskra, V. L. Bonch-Bruevich
Publikováno v:
physica status solidi (b). 68:369-378
Two problems of the Wannier-Mott exciton theory in disordered semiconductors are considered: a) limitation of the exciton life-time due to the second kind collisions with the random field and b) influence of the excitonic effects upon the interband l
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9a8646e3862d4ead9b42728b838db564
https://doi.org/10.1002/pssb.2220680136
https://doi.org/10.1002/pssb.2220680136
Publikováno v:
Soviet Physics Journal. 19:176-184
The bond percolation method is used to investigate the conditions under which a linear (and not exponential) temperature dependence of hopping conductivity can be observed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::325a1bae39d8674ab06248c77661d16b
https://doi.org/10.1007/bf00942865
https://doi.org/10.1007/bf00942865
Autor:
V. L. Bonch-Bruevich, F. Bassani
Publikováno v:
Il Nuovo Cimento D. 7:755-766
We show that an extrinsic semiconductor (n-type), containing a deep level from impurity centres, may produce stochastic self-oscillations in the electron density and in the electric field, under intense illumination which ionizes the deep traps and h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::40a2675741caf31d5ea4d75d36b86f69
https://doi.org/10.1007/bf02453435
https://doi.org/10.1007/bf02453435