Zobrazeno 1 - 10
of 41
pro vyhledávání: '"V K Sahu"'
Publikováno v:
Journal of Marine Medical Society, Vol 17, Iss 1, Pp 81-83 (2015)
Externí odkaz:
https://doaj.org/article/2feb78b2f2e34575aa4acd57ebb4e00f
Autor:
S. Mohanty, A. Kothari, R. Raghavan, V. K. Sahu, N. P. Gurao, K. K. Sahu, B. K. Dhindaw, L. Zeng, M. Xia, S. Gollapudi
Publikováno v:
Frontiers in Materials, Vol 9 (2022)
The effect of heat treatment on the mechanical properties of two high-carbon-containing (1.5 and 3 at%) single-phase face-centered cubic (fcc) Fe40.4Ni11.3Mn34.8Al7.5Cr6 high-entropy alloys is reported in this study. In the cold-rolled (CR) condition
Externí odkaz:
https://doaj.org/article/2475a864770d44d3a2001d62eae54814
Publikováno v:
Journal of Applied and Natural Science. 14:396-410
Three decades before, the gillnet was the major gear in Andaman and Nicobar Islands(ANI), India, because of the less expensive and simple method of operation with non-motorised small dinghies or without craft. Earlier, the gillnet landing was 39% of
Publikováno v:
Energy & Environmental Science. 14:4125-4129
In their recent paper published in Energy and Environmental Science (DOI: 10.1039/D0EE00825G), Zhang et al. demonstrated that if a part of the Au/n-Si Schottky junction is kept in shadow and the remaining under illumination, a potential difference is
Publikováno v:
ACS Applied Electronic Materials. 2:651-658
We propose a model based on the evolution of electron and surface charge density to describe the ultraviolet photoresponse in MgZnO thin films. The MgZnO surface contains a high density of surface ...
Autor:
V. K. Sahu, Y. Pahariya
Publikováno v:
SSRN Electronic Journal.
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:Q61-Q65
Publikováno v:
Computational Mathematics, Nanoelectronics, and Astrophysics ISBN: 9789811597077
In recent times, memory devices based on resistive switching (RS) phenomena in dielectric materials have become a strong contender for the futuristic universal memory. Among other materials being explored for RS application, tantalum pentaoxide (Ta2O
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::91759ad26425743b51f1fca73cda9ec1
https://doi.org/10.1007/978-981-15-9708-4_14
https://doi.org/10.1007/978-981-15-9708-4_14
Publikováno v:
DAE SOLID STATE PHYSICS SYMPOSIUM 2019.
We have grown metal–insulator–metal (MIM) capacitors with TiO2 and Al2O3/TiO2/Al2O3 (ATA) as dielectric thin films using pulsed laser deposition (PLD) on platinized silicon (Pt-Si) substrates. TiO2 thin film thickness was maintained at∼40 nm fo
Publikováno v:
Physica B: Condensed Matter. 619:413218
We have observed weak localization induced by disorder in thin films of Gd doped ZnO (Gd:ZnO) deposited by pulsed laser deposition (PLD). Disorder parameter (Kfl) of all the Gd:ZnO thin films was found to be greater than 1, which indicates that thin