Zobrazeno 1 - 6
of 6
pro vyhledávání: '"V K, Ushakov"'
Autor:
K. Z. Ushakov, V. K. Ushakov
Publikováno v:
Soviet mining science. 26:74-76
Autor:
B. I. Ol'shanskii, N. P. Korzhova, S. I. Chugunova, A. B. Ol'shanskii, Yu.V. Milman, I. V. Gridneva, V. K. Ushakov
Publikováno v:
Soviet Powder Metallurgy and Metal Ceramics. 22:500-506
On the basis of results of our own and other authors' investigations into the variation of the strength of tungsten with temperature, a chart of fracture mechanisms of tungsten is proposed, which differs from the chart published in [1] in that it has
Autor:
V K, Ushakov, Iu P, Chernenko
Publikováno v:
Biofizika. 23(3)
A new method is suggested for the estimation of cell junction adhesion in the liver. It was shown that simple (spacing) junctions of hepatocytes consisted of low and high adhesive parts (sites). The hepatocyte junctions were positioned in the followi
Autor:
Mikhail Ya. Schelev, Nikolai S Vorob'ev, V. K. Ushakov, Yu N Serdyuchenko, Valeri N. Platonov, A M Prokhorov, Valentina P. Degtyareva, V. K. Chevokin
Publikováno v:
SPIE Proceedings.
Present situation in picosecond image converter photonics is analized on the basis of the results obtained by the authors. Picosecond radiation sources are described as well as various approaches in image-tube photocathodes fabrication are discussed.
Autor:
S. L. Musher, A M Prokhorov, V. K. Ushakov, I. A. Dubovoi, V. F. Krasnov, V. E. Ryabchenko, A. S. Chernikov, Mikhail Ya. Schelev, V. V. Balanyuk
Publikováno v:
SPIE Proceedings.
A compeletely new technique of growing (Na,K)3Sb multialkali photocathodes in the high vacuum facilities of the molecular beam epitaxy (MBE) is developed. The main principle of semiconductor technology is used: all sources are operated simultaneously
Autor:
A M Prokhorov, Yu. V. Kulikov, V. N. Ulasyuk, Valentina P. Degtyareva, Mikhail A. Monastyrski, Mikhail Ya. Schelev, Valeri N. Platonov, V. K. Ushakov, Valdis E. Postovalov
Publikováno v:
SPIE Proceedings.
The new streak image tube PIF -01V.P.Degtyareva, Yu.V.Kulikov, M.A.Monastyrski, V.N.Platonov, V.E.Postovalov,A.M.Prokhorov, V.N.Ulasyuk, V.K.Ushakov, M.Ya.SchelevGeneral Physics Institute, USSR Academy of Sciences, 38 Vavilov street, 117942,Moscow, U