Zobrazeno 1 - 4
of 4
pro vyhledávání: '"V I Reshetov"'
Publikováno v:
Soviet Journal of Quantum Electronics. 17:94-97
Transmission electron microscopy was used in a study of the defect structure and morphology of the damage to CdS crystals by stimulated radiation generated in these crystals on excitation with nitrogen laser (λ = 337 nm) pulses. Platelet CdS crystal
Publikováno v:
Soviet Journal of Quantum Electronics. 8:1477-1479
It was found possible to reduce to 20?30 keV the energy of electrons in a longitudinal beam exciting a semiconductor laser with an active medium in the form of a CdSxSe1?x platelet. This reduction was achieved without a significant increase in the in
Publikováno v:
Soviet Journal of Quantum Electronics. 15:867-868
An investigation was made of the influence of an excess sulfur partial pressure in the range 10−3– (2×102) Torr on the low-temperature photoluminescence spectra and also on the lasing threshold and the differential efficiency of electron-beam-ex
Publikováno v:
Soviet Journal of Quantum Electronics. 9:360-361
Stimulated emission was obtained from cadmium sulfide and sulfide-selenide crystals excited transversely by a sharply focused scanning electron beam at a frequency up to 16 kHz. The output power reached 1.2 W. A television image on a 1 m2 screen was