Zobrazeno 1 - 4
of 4
pro vyhledávání: '"V I Okulich"'
Publikováno v:
Technical Physics Letters. 46:19-22
A improvement in the operational characteristics of a SiO2-based memristive device is achieved by irradiating its silicon dioxide layer with Xe+ ions, which creates collision cascades within this layer near the surface. The molecular dynamic modeling
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ffd4300729e898c753a53375fb10e653
https://doi.org/10.1134/s1063785020010083
https://doi.org/10.1134/s1063785020010083
Publikováno v:
Semiconductors. 52:1091-1096
Numerical calculations of the accumulation kinetics of point defects—vacancies and divacancies—under the irradiation of Si with ions having masses of M1 ≤ 31 amu and energies of E ≤ 100 keV under various irradiation conditions are performed.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2ac775815aaa70244d67a3146cf1f9ab
https://doi.org/10.1134/s1063782618090105
https://doi.org/10.1134/s1063782618090105
Publikováno v:
Modelling & Simulation in Materials Science & Engineering; Jan2020, Vol. 28 Issue 1, p1-1, 1p
Publikováno v:
Soviet Physics Journal. 16:594-595
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::240e9b9316f3c21f5f617f8a01a077c3
https://doi.org/10.1007/bf00890867
https://doi.org/10.1007/bf00890867