Zobrazeno 1 - 10
of 1 132
pro vyhledávání: '"V I Nikolaev"'
Publikováno v:
Âderna Fìzika ta Energetika, Vol 23, Iss 4, Pp 263-270 (2022)
The results of radioecological monitoring of the research sites located on the drained areas and the coastal of the ChNPP cooling pond are presented. The features of the spatial distribution of the exposure dose rate, the density of soil radionuclide
Externí odkaz:
https://doaj.org/article/253eb5e158cd4f52a7abc6f583e4422f
Autor:
A. Y. Polyakov, V. I. Nikolaev, A. I. Pechnikov, S. I. Stepanov, E. B. Yakimov, M. P. Scheglov, I. V. Shchemerov, A. A. Vasilev, A. A. Kochkova, A. V. Chernykh, A. V. Chikiryaka, S. J. Pearton
Publikováno v:
APL Materials, Vol 10, Iss 6, Pp 061102-061102-8 (2022)
Thick (23 µm) films of κ-Ga2O3 were grown by Halide Vapor Phase Epitaxy (HVPE) on GaN/sapphire templates at 630 °C. X-ray analysis confirmed the formation of single-phase κ-Ga2O3 with half-widths of the high-resolution x-ray diffraction (004), (0
Externí odkaz:
https://doaj.org/article/285c6d104e244c4782c22b2328b94d3f
Publikováno v:
Âderna Fìzika ta Energetika, Vol 20, Iss 1, Pp 44-50 (2019)
Radiogenic changes in the blood system of Myodes glareolus inhabiting the sites of the 30-km ChNPP zone with different levels of radiation contamination were studied. It is shown that the chronic ionizing radiation exposure results in disorders in th
Externí odkaz:
https://doaj.org/article/dbf8091a1cd943eeb3a5022794aaac2a
Autor:
E. R. Khabibullina, V. I. Nikolaev, A. E. Bolshakov, V. S. Skachkov, G. N. Kropachev, T. V. Kulevoy
Publikováno v:
Physics of Atomic Nuclei. 85:1528-1534
Publikováno v:
Radiophysics and Quantum Electronics. 65:130-136
Autor:
A. Y. Polyakov, N. B. Smirnov, I. V. Shchemerov, E. B. Yakimov, V. I. Nikolaev, S. I. Stepanov, A. I. Pechnikov, A. V. Chernykh, K. D. Shcherbachev, A. S. Shikoh, A. Kochkova, A. A. Vasilev, S. J. Pearton
Publikováno v:
APL Materials, Vol 7, Iss 5, Pp 051103-051103-7 (2019)
Epitaxial layers of α-Ga2O3 with different Sn doping levels were grown by halide vapor phase epitaxy on sapphire. The films had shallow donor concentrations ranging from 1017 to 4.8 × 1019 cm−3. Deep level transient spectroscopy of the lowest dop
Externí odkaz:
https://doaj.org/article/62c030d840d44b248fc22aab13c1599b
Autor:
A. Y. Polyakov, V. I. Nikolaev, A. I. Pechnikov, E. B. Yakimov, P. B. Lagov, I. V. Shchemerov, A. A. Vasilev, A. I. Kochkova, A. V. Chernykh, In-Hwan Lee, S. J. Pearton
Publikováno v:
Journal of Vacuum Science & Technology A. 41
Changes induced by irradiation with 1.1 MeV protons in the transport properties and deep trap spectra of thick (>80 μm) undoped κ-Ga2O3 layers grown on sapphire are reported. Prior to irradiation, the films had a donor concentration of ∼1015 cm
Publikováno v:
Technical Physics Letters. 48:86-89
Autor:
N. V. Chueshova, I. A. Cheshik, E. A. Nadyrov, V. I. Nikolaev, S. I. Kirilenko, V. V. Rozhin, A. N. Kondrachuk, N. S. Serdyuchenko
Publikováno v:
Doklady of the National Academy of Sciences of Belarus. 65:715-723
The cell composition of native transplant autosmes (NTA) used for bone plastics was studied. The histological examination showed the fragments of bone beams with preserved osteoblasts, the foci of myeloid and lymphoid hematopoiesis and the fibrin dep
Publikováno v:
Technical Physics. 66:1186-1193