Zobrazeno 1 - 10
of 17
pro vyhledávání: '"V I Molochev"'
Publikováno v:
Soviet Journal of Quantum Electronics. 9:472-475
Results are presented of an experimental investigation of the radiative characteristics of single-channel semiconductor injection lasers operated under cw conditions (77°K) with different active region widths (1.5–11μ). It is shown that two-sided
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e3f9fbc5446a84f8ad275938f381d21e
https://doi.org/10.1070/qe1979v009n04abeh008912
https://doi.org/10.1070/qe1979v009n04abeh008912
Publikováno v:
Soviet Journal of Quantum Electronics. 10:87-94
Methods are proposed for determining the thermal characteristics of injection lasers from the threshold currents under various operating conditions. A feature of these methods is the easy determination of the initial data required to calculate the th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c8d021078925bf5f4a5a4da8ab119ec8
https://doi.org/10.1070/qe1980v010n01abeh009863
https://doi.org/10.1070/qe1980v010n01abeh009863
Publikováno v:
Soviet Journal of Quantum Electronics. 2:83-86
An investigation was made of the properties of a two-component semiconductor (GaAs) medium and, specifically, of its transmission characteristics. It was found that the absorption coefficient was a nonlinear function of the power entering the medium.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0fc3a499f1b1fa459b1040a19584d5fb
https://doi.org/10.1070/qe1972v002n01abeh003542
https://doi.org/10.1070/qe1972v002n01abeh003542
Publikováno v:
Soviet Journal of Quantum Electronics. 1:135-139
An investigation was made of the interaction between optically coupled diodes under inhomogeneous excitation conditions. It was found that the efficiency of the optical interaction increased with increasing degree of inhomogeneity of the excitation.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::381797d377099c21e5145c7bfb239f99
https://doi.org/10.1070/qe1971v001n02abeh003036
https://doi.org/10.1070/qe1971v001n02abeh003036
Publikováno v:
Soviet Journal of Quantum Electronics. 9:1330-1332
An investigation was made of the matching between various types of semiconductor sources and thin-film planar and stripe waveguides by the tunneling of the optical energy via a prism coupling device and via a system comprising an optical fiber and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75c9d3a0988f2882e8805b19bc53a683
https://doi.org/10.1070/qe1979v009n10abeh009546
https://doi.org/10.1070/qe1979v009n10abeh009546
Autor:
V V Nikitin, V S Kargapol'tsev, K N Narzullaev, V K Malyshev, E P Malygin, V I Molochev, O N Talenskiĭ, A S Semenov
Publikováno v:
Soviet Journal of Quantum Electronics. 8:130-132
An investigation was made of the radiative characteristics of gallium arsenide laser diodes with a luminous region several microns in size. A special feature of these lasers was that they emitted a single longitudinal mode in a wide range of injectio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::668b106e8facc5eb00515014842dd8c9
https://doi.org/10.1070/qe1978v008n01abeh008454
https://doi.org/10.1070/qe1978v008n01abeh008454
Autor:
A D Kovalevskiĭ, T. T. Sultanov, Aleksandr V Kraĭskiĭ, V I Molochev, G I Semenov, Vladimir A Zubov, A I Zolotarev
Publikováno v:
Soviet Journal of Quantum Electronics. 9:1454-1456
A description is given of a correlator utilizing a transient reference wave, double-beam interferometry, and photoelectric recording of output data. A single-frequency semiconductor injection laser is used as a light source. Such a correlator is a co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::65edfdc7cf2a9e1357f9dc3648261b1c
https://doi.org/10.1070/qe1979v009n11abeh009757
https://doi.org/10.1070/qe1979v009n11abeh009757
Publikováno v:
Soviet Journal of Quantum Electronics. 1:655-657
An experimental investigation was made of the time characteristics of GaAs–GaxAl1–xAs injection lasers. The investigation was carried out in a wide range of temperatures and injection currents. The delay time of the coherent emission and transien
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5ed6c08b6ad2dfcc46ed7be6d404d3a8
https://doi.org/10.1070/qe1972v001n06abeh003310
https://doi.org/10.1070/qe1972v001n06abeh003310
Publikováno v:
Soviet Journal of Quantum Electronics. 6:123-124
An investigation was made of the behavior of the temporal coherence length of the radiation emitted from single-channel injection lasers when the radiation intensity was varied. The rate of rise of the coherence length with increasing intensity slowe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc8006ffe00293f0a6a4f54306b4cd20
https://doi.org/10.1070/qe1976v006n01abeh010863
https://doi.org/10.1070/qe1976v006n01abeh010863
Autor:
V I Molochev, A V Shmal'ko, A V Makovkin, Yu A Bykovskiĭ, V K Malyshev, V L Smirnov, Yu. P. Zakharov, O N Talenskiĭ
Publikováno v:
Soviet Journal of Quantum Electronics. 7:1144-1145
An investigation was made of active integrated-optics devices based on epitaxial GaAlAs-GaAs heterostructures sharing a common GaAs substrate. The results demonstrated a possibility of multifunctional use of GaAlAs heterostructure elements. An integr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67af6adf2fd538c329972abbd0a0057e
https://doi.org/10.1070/qe1977v007n09abeh012819
https://doi.org/10.1070/qe1977v007n09abeh012819