Zobrazeno 1 - 8
of 8
pro vyhledávání: '"V I Butin"'
Publikováno v:
2019 International Multi-Conference on Engineering, Computer and Information Sciences (SIBIRCON).
In this paper the approach of shape recovery for impulse signal transmitted along a long-distance line is described. The actual spectrum of impulse signal during electronic device tests on accelerators is ranging from 1 MHz–1 GHz. In addition, the
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c33c21f3f3d7eebf81fd368da0050647
https://doi.org/10.1109/sibircon48586.2019.8958120
https://doi.org/10.1109/sibircon48586.2019.8958120
Publikováno v:
2019 International Siberian Conference on Control and Communications (SIBCON).
In this paper a new approach of p-channel MOS-transistors using for total dose measurements during radiation tests is described and well founded. We perform the release based on microcontroller STM32 as a sensor of total ionization dose (TID). The de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::1143345d06ff8747d2275a7523c1f5f8
https://doi.org/10.1109/sibcon.2019.8729655
https://doi.org/10.1109/sibcon.2019.8729655
Publikováno v:
2017 International Multi-Conference on Engineering, Computer and Information Sciences (SIBIRCON).
In this paper a new approach of p-channel MOS-transistors using for total dose monitoring at semiconductor components under radiation is presented. The calibration results enable to determine the numerical parameters for MOSFETs electro-physical mode
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::39e85e00e47df6270a3b33a5d621fc01
https://doi.org/10.1109/sibircon.2017.8109882
https://doi.org/10.1109/sibircon.2017.8109882
Autor:
A. V. Butina, V. I. Butin
Publikováno v:
2017 International Multi-Conference on Engineering, Computer and Information Sciences (SIBIRCON).
An efficient practical method for bipolar transistor application for neutron fluence registration is presented. The method is focused on neutron fluences damage effect correlation for various sources to reference source. The bipolar transistor connec
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ae9d7eb5cd283866840e9e06f48894d5
https://doi.org/10.1109/sibircon.2017.8109881
https://doi.org/10.1109/sibircon.2017.8109881
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 498:012007
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::483a65c6d7159c3a3228109b8e9d0631
https://doi.org/10.1088/1757-899x/498/1/012007
https://doi.org/10.1088/1757-899x/498/1/012007
Publikováno v:
IOP Conference Series: Materials Science and Engineering. 498:012006
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::057f642d614d1b4916ad8d1ad0c7aa1d
https://doi.org/10.1088/1757-899x/498/1/012006
https://doi.org/10.1088/1757-899x/498/1/012006
Publikováno v:
IOP Conference Series: Materials Science & Engineering; Apr2019, Vol. 498 Issue 1, p1-1, 1p
Autor:
V I Butin, P Ya Kundyshev
Publikováno v:
IOP Conference Series: Materials Science & Engineering; 2016, Vol. 151 Issue 1, p1-1, 1p