Zobrazeno 1 - 10
of 14
pro vyhledávání: '"V I, Glotov"'
Autor:
V. I. Glotov, I. Krzeckovskis
Publikováno v:
Вестник Российского экономического университета имени Г. В. Плеханова, Vol 0, Iss 2, Pp 168-179 (2020)
In studying the development of the international crime situation and the dynamics of changes in the «strategic priorities» of transnational criminal groups, it should be noted that crimes against the financial system have been and remain among the
Externí odkaz:
https://doaj.org/article/1e0512fcab4c46bb8d172b5505d6c9f5
Autor:
M. I. Volkova, D. M. Mikhailov, A. A. Yurov, V. I. Glotov, A. A. Panteleev, K. V. Demkin, Chief Specialist Fian P.N. Lebedeva Ras, Moscow, Russia, Россия
Publikováno v:
SOFT MEASUREMENTS AND COMPUTING. 1:91-98
The article is devoted to comparing the efficiency of algorithms for processing Bitcoin blockchain transaction database. The article describes the algorithm of vertex marking developed by the group. Based on the comparison of this and other algorithm
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::fa35aa5c4f284c629b47c3160d6dae2e
https://doi.org/10.36871/2618-9976.2021.02.008
https://doi.org/10.36871/2618-9976.2021.02.008
Publikováno v:
Humanities and Social Sciences. Bulletin of the Financial University. 10:14-20
This article deals with the problems of one of the most urgent threats in the world today — the problem of terrorism, and its essential and cross-border form — cyberterrorism. It is of growing interest in the analysis of information and communica
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f05ba3426a41ae669663d48d3a61180c
https://doi.org/10.26794/2226-7867-2020-10-1-14-20
https://doi.org/10.26794/2226-7867-2020-10-1-14-20
Autor:
Karim Cherkaoui, T.M. Nazarova, Alexei Nazarov, T. E. Rudenko, Paul K. Hurley, Vladimir Djara, Yu.V. Gomeniuk, V. I. Glotov, Y. Y. Gomeniuk, P. N. Okholin
Publikováno v:
ECS Journal of Solid State Science and Technology. 8:Q24-Q31
In this paper, we study the effect of low-temperature RF plasma treatment in forming gas (10%H2+90%N2) on the electrical characteristics of junctionless MOSFETs with n-In0.53Ga0.47As channel and an Al2O3 gate dielectric. The impact of plasma power de
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::0a685cad7a97c8fef77e03c21e80faae
https://doi.org/10.1149/2.0181902jss
https://doi.org/10.1149/2.0181902jss
Autor:
A.V. Rusavsky, T.M. Nazarova, P. N. Okholin, O. Gudymenko, O.Yu. Khyzhun, A.V. Vasin, Yu.V. Gomeniuk, Alexey Nazarov, S.V. Malyuta, V. I. Glotov, Petr M. Lytvyn, O. M. Slobodian
Publikováno v:
Applied Surface Science. 544:148876
The chemical and structural modification of thin nanoporous graphitized carbon film was achieved by RF plasma treatment in the atmosphere of Ar, N2 and H2 + N2. The effect of carbon surface modification on the resistive sensitivity of gas sensor to w
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::46c22f4bbcc75bc5aced2704a7998a41
https://doi.org/10.1016/j.apsusc.2020.148876
https://doi.org/10.1016/j.apsusc.2020.148876
Autor:
Ray Duffy, Stanislav Tiagulskyi, V.O. Yuchymchuk, P. N. Okholin, Alexei Nazarov, V. I. Glotov, Serhii Kryvyi, V. S. Lysenko, V. P. Kladko, Maryam Shayesteh, Petr M. Lytvyn
Publikováno v:
Materials Science in Semiconductor Processing. 42:204-209
RF plasma annealing (RFPA) and rapid thermal annealing (RTA) of high-dose implanted n-type and p-type amorphized Ge layers have been studied by Raman scattering spectroscopy and X-ray diffraction techniques. It is shown that recrystallization of n-Ge
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95e32118ba66cd04ed857f3d8cf5a77b
https://doi.org/10.1016/j.mssp.2015.08.028
https://doi.org/10.1016/j.mssp.2015.08.028
Autor:
V. I. Glotov, Alexei Nazarov, Volodymyr O. Yukhymchuk, P. N. Okholin, T.M. Nazarova, Ray Duffy, Petr M. Lytvyn, V. S. Lysenko, Enrico Napolitani
RF hydrogen plasma treatment, rapid thermal annealing and thermal annealing of high-dose implanted amorphized p-type Ge layers have been studied by Raman scattering spectroscopy, AFM, SIMS and electrochemical capacitance-voltage profiling. It is show
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::1ff3f5fa80cc731b172475f81e176338
http://hdl.handle.net/11577/3220362
http://hdl.handle.net/11577/3220362
Autor:
D M Mihailov, V I Glotov
Publikováno v:
KnE Social Sciences. 3:583
The technology of BlockChain and cryptocurrency is an actual topic for humanity today. There are different policies regulating cryptocurrencies, but they are still far from perfect. The difficulty of technical regulation of these systems is beyond do
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c97d8614a2f08c43ece692f6f34bce0e
https://doi.org/10.18502/kss.v3i2.1593
https://doi.org/10.18502/kss.v3i2.1593
Publikováno v:
Klinicheskaia khirurgiia. (5)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::3c0a5dabdea26cccee329283e0ab002c
https://pubmed.ncbi.nlm.nih.gov/1875629
https://pubmed.ncbi.nlm.nih.gov/1875629
Publikováno v:
Zdravookhranenie Rossiiskoi Federatsii. 17(4)
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=pmid________::4867cd91a191efef1d99ddb4938a8497
https://pubmed.ncbi.nlm.nih.gov/4493789
https://pubmed.ncbi.nlm.nih.gov/4493789