Zobrazeno 1 - 10
of 61
pro vyhledávání: '"V G Bozhkov"'
Autor:
L.V. Lubyako, A. G. Shalashov, A. F. Andriyanov, V. G. Bozhkov, E. D. Gospodchikov, D. S. Dorozhkina
Publikováno v:
Radiophysics and Quantum Electronics. 64:338-346
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b1e53134e3175387a40ecf2f38902073
https://doi.org/10.1007/s11141-022-10136-9
https://doi.org/10.1007/s11141-022-10136-9
Autor:
Yu. P. Akulinichev, V. A. Krakovskiy, V. G. Bozhkov, V. M. Rulevskiy, E. S. Pascal, Radioelectronics (Tusur), V. I. Karnyshev, V. I. Avdzeiko
Publikováno v:
Proceedings of Tomsk State University of Control Systems and Radioelectronics. 23:7-15
The systems intended for detecting objects of artificial and natural origin are widely used while implementing the remote sensing methods. In this case, such different frequency ranges of sounding signals as radar, acoustic and optical ones are used.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f6f78e665a4e51e436799209a14174ca
https://doi.org/10.21293/1818-0442-2020-23-4-7-15
https://doi.org/10.21293/1818-0442-2020-23-4-7-15
Publikováno v:
Proceedings of Tomsk State University of Control Systems and Radioelectronics. 22:26-32
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7caf9a3debed1e5c59226c85b5596a24
https://doi.org/10.21293/1818-0442-2019-22-4-26-32
https://doi.org/10.21293/1818-0442-2019-22-4-26-32
Autor:
V. G. Ryskin, L. I. Fedoseev, V. G. Bozhkov, M. Yu. Kulikov, A. A. Krasilnikov, O. S. Bol’shakov, A. A. Shvetsov
Publikováno v:
Instruments and Experimental Techniques. 60:701-704
A system for automatic internal calibration of millimeter-range radiometers is described. This system is based on an electrically controlled modulator–calibrator, which is a compact solid-state device that combines the functions of a modulator and
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d90b58bfc04757494a8f382df0089712
https://doi.org/10.1134/s0020441217040169
https://doi.org/10.1134/s0020441217040169
Autor:
Andrey P. Fokin, V G Bozhkov, Alexander I. Tsvetkov, V A Genneberg, M. Yu. Glyavin, B. Z. Movshevich, Vladimir N. Manuilov, Anton S. Sedov
Publikováno v:
Review of Scientific Instruments. 90:124705
This paper presents a comparison of simple self-consistent theory data and experimental results aimed to study the influence of the anode voltage on the frequency of the subterahertz gyrotron with the goal of frequency stabilization. Numerical simula
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::d15c3d19fb04ae91aabe261871f41099
https://doi.org/10.1063/1.5132831
https://doi.org/10.1063/1.5132831
Publikováno v:
Russian Physics Journal. 53:914-919
The dependence of the average electron-drift velocity on the electric field strength is measured for a twodimensional electron gas in a quantum well of an AlGaAs/InGaAs heterostructure in the temperature range 200–400 K. It is shown that the satura
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b3d15c8ae5bee37fe0e6b29b5939037
https://doi.org/10.1007/s11182-011-9510-x
https://doi.org/10.1007/s11182-011-9510-x
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 5:75-89
The surface of epitaxial gallium arsenide (as-grown and subjected to standard chemical treatments for producing metal-GaAs electrical contacts) has been studied by atomic force microscopy. It was shown that the surface relief can be characterized by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::798294b8e105b5fdf7ad2e91bdb0f0a8
https://doi.org/10.1134/s1027451011010071
https://doi.org/10.1134/s1027451011010071
Atomic force microscopy study of the potential distribution over a locally metallized n-GaAs surface
Publikováno v:
Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques. 3:888-896
Investigations of the potential of the free surface of gallium arsenide and of the surface coated (locally or entirely) by thin layers of gold or platinum have been carried out using atomic force microscopy in the Kelvin mode. The results obtained sh
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::35870723a8440e271aa45d8a978fe38a
https://doi.org/10.1134/s102745100906007x
https://doi.org/10.1134/s102745100906007x
Autor:
V. G. Bozhkov, N. A. Torkhov
Publikováno v:
Semiconductors. 43:551-556
The fractal geometric properties of the relief of the surface potential of a heavily doped n +-GaAs (100) wafer are studied by Kelvin’s method of atomic force microscopy. The average fractal dimensionalities determined by the triangulation method (
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c958bcae998309f213ff207447ae57f2
https://doi.org/10.1134/s1063782609050017
https://doi.org/10.1134/s1063782609050017
Publikováno v:
Semiconductors. 42:531-539
Using the method of atomic force microscopy, complex studies of the profile, potential distribution φ(x,y), and distributions of the phase contrast of the surface of n-GaAs subjected to various types of chemical treatment are carried out. The distri
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a78fde2ad11d03765a8c74a0b60393a8
https://doi.org/10.1134/s1063782608050084
https://doi.org/10.1134/s1063782608050084