Zobrazeno 1 - 10
of 27
pro vyhledávání: '"V G Bessergenev"'
Autor:
V G Bessergenev, M.C. Mateus, João P. Lourenço, Ana M. Botelho do Rego, Eberhard Burkel, Adwaa Ahmed, Martin Hantusch, José F.M.L. Mariano
Publikováno v:
Nanomaterials, Vol 11, Iss 2519, p 2519 (2021)
Nanomaterials
Volume 11
Issue 10
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Nanomaterials
Volume 11
Issue 10
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Dielectric properties and spectral dependence of the photocatalytic constant of Co doped P25 Degussa powder were studied. Doping of TiO2 matrix with cobalt was achieved by precipitation method using of Tris(diethylditiocarbamate)Co(III) precursor (Co
Autor:
V. G. Bessergenev, M. C. Mateus, D. A. Vasconcelos, J. F. M. L. Mariano, A. M. Botelho do Rego, R. Lange, E. Burkel
Publikováno v:
International Journal of Photoenergy, Vol 2012 (2012)
The TiO2 thin films were prepared using Ti(dpm)2(OPri)2 and Ti(OPri)4 (dpm = 2,2,6,6-tetramethylheptane-3,5-dione, Pri = isopropyl) as the precursors. The volatile compounds Fe[(C2H5)2NCS2]3 and [(CH3)C]2S2 were used to prepare doped TiO2 films. The
Externí odkaz:
https://doaj.org/article/89fa8bd2b26b4914ac60823346eefe1b
Publikováno v:
Catalysis Today. 307:111-118
The defect structures of photocatalytic improved Degussa P25 powder were evaluated by X-ray photoelectron spectroscopy (XPS), paramagnetic resonance spectroscopy (EPR) and in situ studies of the electrical resistivity in order to understand the charg
Publikováno v:
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
The photocatalytic activities of Degussa P25 powders annealed at various temperatures in vacuum and air were studied together with investigations of their compositions by XPS, of their crystal structures by XRD and of their specific surface areas by
Publikováno v:
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
A tubular photocatalytic reactor of the immersion type for water purification from organic pollutants has been developed. Few important principles were used in the construction of the reactor, namely, a symmetrical and uniform light distribution with
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::293c55c5f6b2ab3fd2308926d0f5bf3b
Autor:
R. Lange, Eberhard Burkel, D A Vasconcelos, V G Bessergenev, A.M. Botelho do Rego, Marília Mateus, José F.M.L. Mariano
Publikováno v:
Repositório Científico de Acesso Aberto de Portugal
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
International Journal of Photoenergy, Vol 2012 (2012)
Repositório Científico de Acesso Aberto de Portugal (RCAAP)
instacron:RCAAP
International Journal of Photoenergy, Vol 2012 (2012)
The TiO2thin films were prepared using Ti(dpm)2(OPri)2and Ti(OPri)4(dpm = 2,2,6,6-tetramethylheptane-3,5-dione,Pri= isopropyl) as the precursors. The volatile compounds Fe[(C2H5)2NCS2]3and [(CH3)C]2S2were used to prepare doped TiO2films. The synthesi
Autor:
V G Bessergenev
Publikováno v:
ECS Transactions. 25:35-44
The results of the study on dielectric properties of TiO2 thin films at high temperature T up to 900ºC are reported. High-temperature (Tc ~ 700ºC) anomalous behavior of dielectric constant was observed in both anatase and rutile TiO2 thin films. Di
Autor:
V G Bessergenev
Publikováno v:
Materials Research Bulletin. 44:1722-1728
Anatase and rutile TiO 2 thin films were prepared by chemical vapor deposition with precursors Ti(OPr i ) 4 and Ti(dpm) 2 (OPr i ) 2 (dpm = 2,2,6,6-tetramethylheptane-3,5-dione and Pr i = isopropyl), respectively. The dielectric properties of TiO 2 t
Publikováno v:
Surface and Coatings Technology. 201:9141-9145
Iron, cobalt and manganese sulphide thin films have been prepared by CVD using Fe[(C 2 H 5 ) 2 NCS 2 ] 3 , Co[(C 2 H 5 ) 2 NCS 2 ] 3 and MnPhen[(C 2 H 5 ) 2 NCS 2 ] 2 complex compounds (CCs) as precursors. The respective oxides were prepared by annea
Autor:
Eberhard Burkel, V G Bessergenev
Publikováno v:
Encyclopedia of Nanotechnology ISBN: 9789400761780
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cb2692a86c48ed088299d462b69c6e78
https://doi.org/10.1007/978-94-007-6178-0_100951-1
https://doi.org/10.1007/978-94-007-6178-0_100951-1