Zobrazeno 1 - 7
of 7
pro vyhledávání: '"V E Ternovaya"'
Autor:
Pavel Seredin, D. A. Goloschapov, A. S. Lenshin, V. E. Ternovaya, I. S. Tarasov, I. N. Arsentyev, A. D. Bondarev
Publikováno v:
Bulletin of the Russian Academy of Sciences: Physics. 81:1119-1126
IR and UV spectroscopy is used to study the properties of nanostructured aluminum nitride films obtained via reactive ion-plasma sputtering on GaAs substrates with different orientations. Nanostructured thin (100–200 nm) films of cubic aluminum nit
Publikováno v:
Journal of Physics: Conference Series. 1347:012105
A method for forming thin films of the Cu2SnS3 compound homogeneous in phase composition for use in solar cell devices is proposed. The Cu-Sn alloy layers deposited by thermal spraying in vacuum were annealed in sulfur vapor in a graphite chamber of
Autor:
V. E. Ternovaya, A. S. Lenshin, Dmitry Goloshchapov, I. S. Tarasov, Pavel Seredin, I. N. Arsentyev, V. V. Shamakhov, A. V. Popov, D. N. Nikolaev
Publikováno v:
Semiconductors. 49:1019-1024
Structural and spectroscopic methods are used to study the epitaxial layers of n-type AlxGa1 − xAs solid solutions produced by the metal-organic chemical vapor deposition method. It is shown that, when AlxGa1 − xAs solid solutions are doped with
Autor:
I. N. Arsent’ev, E. P. Domashevskaya, V. E. Ternovaya, Pavel Seredin, I. S. Tarasov, D. A. Vinokurov, Tatiana Prutskij
Publikováno v:
Physics of the Solid State. 55:2169-2172
It has been established that the photoluminescence spectra of heavily doped heterostructures based on Al x Ga1 − x As)1 − y Si y solid solutions exhibit quenching of the main exciton bands of Al x Ga1 − x As ternary solid solutions and appearan
Autor:
I. S. Tarasov, Pavel Seredin, I. N. Arsentyev, V. E. Ternovaya, A. V. Glotov, E. P. Domashevskaya, L. S. Vavilova
Publikováno v:
Semiconductors. 45:1433-1440
Using X-ray structural analysis, scanning electron microscopy, atomic force microscopy, and photoluminescent spectroscopy, it is shown that it is possible to obtain a small-scale domain structure on the surface of liquid-phase epitaxial heterostructu
Autor:
A. V. Glotov, V. E. Ternovaya, Pavel Seredin, E. P. Domashevskaya, I. N. Arsentyev, A. L. Stankevich, D. A. Vinokurov, I. S. Tarasov
Publikováno v:
Semiconductors. 45:481-492
The X-ray diffraction and infrared spectroscopy data for MOCVD-hydride Al x Ga1 − x As:Si/GaAs(100) heterostructures and homoepitaxial GaAs:Si/GaAs(100) structures doped with Si to a content of up to ∼1 at % are reported. It is shown that, in the
Publikováno v:
Journal of Physics: Conference Series; 2019, Vol. 1347 Issue 1, p1-1, 1p