Zobrazeno 1 - 10
of 17
pro vyhledávání: '"V E Bougrov"'
Autor:
N. K. Zhumashev, K. D. Munbaev, N. L. Bazhenov, N. D. Stoyanov, S. S. Kizhaev, T. I. Gurina, A. P. Astakhova, A. V. Tchernyaev, S. S. Molchanov, K. M. Salikhov, V. E. Bougrov, H. Lipsanen
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 16, Iss 1, Pp 76-84 (2016)
Subject of Study. We consider spectral characteristics of mid-infrared light-emitting diodes with heterostructures based on InAs(Sb,P) emitting at T=300 K in the wavelength range 3.4–4.1 micrometers. The aim of the study was to search for the way
Externí odkaz:
https://doaj.org/article/56241829b2234982b4df8e70ea3d0f4c
Autor:
A. I. Podosinnikov, G. E. Romanova, S. A. Sheglov, V. S. Peretyagin, K. D. Munbaev, H. K. Lipsanen, V. E. Bougrov
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 15, Iss 2, Pp 202-210 (2015)
Subject of study. The paper deals with light quality improvement of multi–chip RGB light-emitting diodes (LEDs) and luminaries on their basis. In particular, we have studied the issues of the edge effect reducing, which is non–uniformity of col
Externí odkaz:
https://doaj.org/article/7a3ec0a223204d5aa0fcf9b316f26c7c
Publikováno v:
2022 International Conference Laser Optics (ICLO).
Publikováno v:
APL Materials, Vol 4, Iss 1, Pp 016105-016105-8 (2016)
We calculate the critical thickness for misfit dislocation (MD) formation in lattice mismatched semipolar and nonpolar III-nitride wurtzite semiconductor layers for the case of MDs originated from prismatic slip (PSMDs). It has been shown that there
Externí odkaz:
https://doaj.org/article/2f40540d024e43dca38e69765c467f5f
Autor:
N. A. Maleev, A. G. Kuzmenkov, M. M. Kulagina, Yu. A. Guseva, A. P. Vasil’ev, S. A. Blokhin, M. A. Bobrov, S. I. Troshkov, V. V. Andryushkin, E. S. Kolodeznyi, V. E. Bougrov, V. M. Ustinov
Publikováno v:
Journal of Optical Technology. 89:677
Autor:
S. A. Blokhin, A. V. Babichev, L. Ya. Karachinsky, I. I. Novikov, A. A. Blokhin, M. A. Bobrov, Y. N. Kovach, N. A. Maleev, A. V. Kulikov, V. E. Bougrov, S. V. Varzhel, K. O. Voropaev, V. M. Ustinov, A. Yu. Egorov
Publikováno v:
Journal of Optical Technology. 89:681
Autor:
V. V. Andryushkin, A. G. Gladyshev, A. V. Babichev, E. S. Kolodeznyi, I. I. Novikov, L. Ya. Karachinsky, S. S. Rochas, N. A. Maleev, V. P. Khvostikov, B. Ya. Ber, A. G. Kuzmenkov, S. S. Kizhaev, V. E. Bougrov
Publikováno v:
Journal of Optical Technology. 88:742
Autor:
S A Degtiareva, D S Shiryaev, Y S Andreev, I S Polukhin, E A Kondratieva, I G Smirnova, V E Bougrov
Publikováno v:
Journal of Physics: Conference Series. 2086:012080
The monitoring is integral part for patients with chronic disorders, as such cases require serious attention to save their life and predict recovery. Physiological signs such as heart rate, hemodynamic, temperature, saturation are collected from biom
Autor:
V V Andryushkin, A G Gladyshev, A V Babichev, E S Kolodeznyi, I I Novikov, L Ya Karachinsky, N A Maleev, V P Khvostikov, B Ya Ber, A G Kuzmenkov, S S Kizhaev, V E Bougrov
Publikováno v:
Journal of Physics: Conference Series. 2103:012184
This paper presents a study of Zn diffusion process into InP and InGaAs/InP epitaxial heterostructures grown by molecular beam epitaxy. It was found that both diffusion systems: a resistively heated quartz reactor with a solid-state Zn vapor source p
Autor:
S S Rochas, L Karachinsky Ya, A V Babichev, I I Novikov, A G Gladyshev, E S Kolodeznyi, P E Kopytov, V E Bougrov, S A Blokhin, A A Blokhin, K O Voropaev, A Yu Egorov
Publikováno v:
Journal of Physics: Conference Series. 2103:012176
Vertical-cavity surface-emitting lasers of 1.3 μm spectral range with the active region based on the InGaAs/InGaAlAs superlattice were studied. VCSEL heterostructure was formed by a wafer-fusion of the heterostructure with an active region and two D