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Quantum dots microstructure by XAFS spectroscopy: GaN/AlN system depending on preparation conditions
Autor:
V G Mansurov, S B Erenburg, I Toropov, N V Bausk, S. Nikitenko, W. Bras, V E Bausk, K S Zhuravlev
Publikováno v:
Journal of Physics: Conference Series. 41:261-266
GaK EXAFS spectra of GaN/AlN heterostructures were measured. Microstructure parameters of GaN/AlN heterosystems with discrete electronic spectra largely influenced by the elastic deformation at the boundaries of the nanoclusters and substrate was det
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b62e6afc979a9483d9a24fd850ae2689
https://doi.org/10.1088/1742-6596/41/1/027
https://doi.org/10.1088/1742-6596/41/1/027
