Zobrazeno 1 - 10
of 60
pro vyhledávání: '"V Drouot"'
Publikováno v:
Microscopy of Semiconducting Materials 2003 ISBN: 9781351074636
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::21d2986fcf7d21e11d0b3f85ab3d9a13
https://doi.org/10.1201/9781351074636-24
https://doi.org/10.1201/9781351074636-24
Autor:
O. Dehaese, Slimane Loualiche, N. Bertru, Cyril Paranthoen, A. Le Corre, V. Drouot, S. Fréchengues, B. Lambert
Publikováno v:
Journal of Crystal Growth. 209:661-665
InAs islands have been grown by gas source molecular beam epitaxy on (1 1 3)B InP substrates and examined by atomic force microscopy and photoluminescence. Two types of island size and spatial distribution have been identi"ed. For deposits lower than
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::074b480c04eab6bd541a8b62b2e284ea
https://doi.org/10.1016/s0022-0248(99)00593-x
https://doi.org/10.1016/s0022-0248(99)00593-x
Publikováno v:
Journal of Crystal Growth. :1180-1185
The influence of the InP(3 1 1)B high index substrate on InAs island characteristics, is investigated as regards to the (1 0 0) substrate. The AFM images of a nominally 2.1 ML thick InAs layer show that the island density is 10 times higher on the (3
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c883ccf67f4b12cb444acf5b22071af
https://doi.org/10.1016/s0022-0248(99)00022-6
https://doi.org/10.1016/s0022-0248(99)00022-6
Publikováno v:
Journal of Crystal Growth. :252-255
Compressively strained layers of Ga 0.2 In 0.8 As were grown on InP(0 0 1) and (1 1 3)B by gas source MBE (lattice mismatch of 1.8%). For a growth temperature of 500°C, islands were obtained on the (1 1 3)B substrate. On the (0 0 1) substrate, the d
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d2ec4c0159ac7d6e882d0d18bff8098
https://doi.org/10.1016/s0022-0248(98)01332-3
https://doi.org/10.1016/s0022-0248(98)01332-3
Publikováno v:
Physical Review B: Condensed Matter and Materials Physics (1998-2015)
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1998, 58 (16), pp.10700-10704. ⟨10.1103/PhysRevB.58.10700⟩
Physical Review B: Condensed Matter and Materials Physics (1998-2015), American Physical Society, 1998, 58 (16), pp.10700-10704. ⟨10.1103/PhysRevB.58.10700⟩
International audience
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::52172bc70972742af2650042056edd0e
https://doi.org/10.1103/physrevb.58.10700
https://doi.org/10.1103/physrevb.58.10700
Publikováno v:
Physical Review B. 57:11915-11918
We observe large resistance increases in a crossed band-gap electron-hole system owing to a coupling-induced energy gap at the point of anticrossing between the electron and hole dispersion relations. Samples with various degrees of coupling have bee
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::06986bfc7a375c8a69cd2e7c4b0b20fd
https://doi.org/10.1103/physrevb.57.11915
https://doi.org/10.1103/physrevb.57.11915
Autor:
Beata Kardynal, V. Drouot, Richard T. Phillips, L. Pugh, David A. Ritchie, Núria Garro, Michelle Y. Simmons
Publikováno v:
Physical Review B. 55:13752-13760
A systematic study of resonant Rayleigh scattering (RRS) in semiconductor single quantum wells (QW's) is reported. The QW's were grown under different conditions leading to different interface roughness. High spatial and spectral resolution photolumi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e19163ffe8349da31bc21b7e069876db
https://doi.org/10.1103/physrevb.55.13752
https://doi.org/10.1103/physrevb.55.13752
Publikováno v:
Journal of Crystal Growth. :346-351
Using an integrated fabrication facility consisting of molecular beam epitaxial growth chambers, a Ga + focused ion beam lithography system and an ultra-high vacuum scanning tunnelling microscope, we have studied, in situ, the interaction of high ene
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7380069b2a360868225403c613443730
https://doi.org/10.1016/s0022-0248(96)01185-2
https://doi.org/10.1016/s0022-0248(96)01185-2
Publikováno v:
Semiconductor Science and Technology. 11:1178-1184
An InGaAs single quantum well structure has been used to investigate the effect of H-plasma exposure for oxide removal and subsequent regrowth on InP surfaces. In addition, the H-plasma desorption is compared with the usual technique of thermal desor
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5e1441b2d40cfd46c3e2a8080fca1772
https://doi.org/10.1088/0268-1242/11/8/011
https://doi.org/10.1088/0268-1242/11/8/011
Autor:
Xavier Letartre, C. Santinelli, M. Ambri, M. Pitaval, V. Drouot, Michel Gendry, Pierre Viktorovitch, Jacques Tardy, G. Hollinger
Publikováno v:
IEEE Transactions on Electron Devices
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 1996, 43 (9), pp.1326-1335. ⟨10.1109/16.535315⟩
IEEE Transactions on Electron Devices, Institute of Electrical and Electronics Engineers, 1996, 43 (9), pp.1326-1335. ⟨10.1109/16.535315⟩
Strained In/sub x/Ga/sub 1-x/As/InAlAs modulation-doped heterostructures on InP have been studied theoretically and experimentally. Simulations based on self-consistently solving the Schrodinger-Poisson equations have been performed to investigate th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::a68f954966127309a7715984572c3120
https://doi.org/10.1109/16.535315
https://doi.org/10.1109/16.535315