Zobrazeno 1 - 10
of 18
pro vyhledávání: '"V A Shkoldin"'
Autor:
Alexander S. Shalin, Alexey M. Mozharov, Mihail Petrov, Alexander Golubok, Kristina Novikova, D. A. Kislov, Nikita Solomonov, V. A. Shkoldin, Irina Nadoyan, Yury Berdnikov, Ivan Mukhin
Publikováno v:
ACS Applied Nano Materials. 4:11989-11996
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::58353b8e8a3ffe012964ff8d0f5ee735
https://doi.org/10.1021/acsanm.1c02558
https://doi.org/10.1021/acsanm.1c02558
Publikováno v:
Naučno-tehničeskij Vestnik Informacionnyh Tehnologij, Mehaniki i Optiki, Vol 15, Iss 1, Pp 60-64 (2015)
The subject of study. Investigation results for 3C-SiC layers, obtained on single-crystal 15R-SiC substrates by sublimation epitaxy in vacuum are presented. Materials and methods. 15R polytype Lely crystals were used as a substrate; the growth was c
Externí odkaz:
https://doaj.org/article/ed25fe207d2c45c1a28049a8ee900a9e
Autor:
Anton Samusev, Alexey M. Mozharov, V. A. Shkoldin, D. V. Lebedev, Dmitry V. Permyakov, Lilia N Dvoretckaia, Andrey Bogdanov, Ivan Mukhin, Alexander Golubok
Publikováno v:
The Journal of Physical Chemistry Letters. 12:501-507
Electrically driven plasmonic nanoantennas can be integrated as a local source of the optical signal of advanced photonic schemes for on-chip data processing. The inelastic electron tunneling provides the photon generation or launch of surface plasmo
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::93456d0e6cf973aeacbaca00f69cbd21
https://doi.org/10.1021/acs.jpclett.0c03039
https://doi.org/10.1021/acs.jpclett.0c03039
Autor:
A. O. Golubok, V. A. Shkoldin, A. M. Mozharov, A. A. Evstrapov, F. E. Komissarenko, D. V. Lebedev, I. S. Muhin, A. S. Bukatin
Publikováno v:
NAUCHNOE PRIBOROSTROENIE. 29:57-61
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b25b8756d2f7f267b6a0bcd0c6c0ec83
https://doi.org/10.18358/np-29-4-i5761
https://doi.org/10.18358/np-29-4-i5761
Autor:
Alexander V. Uskov, Ivan Mukhin, Alexey D. Bolshakov, V. A. Shkoldin, Anton Samusev, Konstantin Ladutenko, Dmitry V. Permyakov, M. V. Zhukov, A. A. Vasiliev, Alexander Golubok, Andrey Bogdanov
Publikováno v:
The Journal of Physical Chemistry C. 123:8813-8817
In this paper, we study light emission from a tunnel contact between the Au film on a glass substrate and the Au-coated tungsten probe of the scanning tunneling microscope at ambient conditions. We...
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3b9f5e2d1c209f8e6bf977c75a083914
https://doi.org/10.1021/acs.jpcc.8b11271
https://doi.org/10.1021/acs.jpcc.8b11271
Autor:
Alexey M. Mozharov, L N Dvoretckaia, G. A. Sapunov, V. A. Shkoldin, K. Yu Shugurov, M. S. Mukhin, Ivan Mukhin, Alexey D. Bolshakov, G. E. Cirlin, Vladimir V. Fedorov
Publikováno v:
Semiconductors. 52:2088-2091
In this paper we demonstrate the results on selective area growth of GaP nanowires via self-catalyzed growth method using molecular beam epitaxy (MBE) technique on patterned Si(111) substrates. The pattern fabrication method on a base of the photolit
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0bf619308651a813338e5504b2adf5a0
https://doi.org/10.1134/s1063782618160054
https://doi.org/10.1134/s1063782618160054
Autor:
L N Dvoretckaia, Alexey M. Mozharov, K. Yu Shugurov, V. A. Shkoldin, Ivan Mukhin, G. A. Sapunov, Vladimir V. Fedorov, Alexey D. Bolshakov, G. E. Cirlin, Demid A. Kirilenko
Publikováno v:
Semiconductors. 52:2092-2095
Self-catalyzed GaP nanowire and GaP/GaPAs nanowire heterostructures have been grown on Si(111) by solid-source molecular beam epitaxy. Formation of wurtzite polytype segments with thicknesses varying from the several tens up to the 500 nm depending o
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d62f4ff08c94511745f23850d01232cf
https://doi.org/10.1134/s106378261816008x
https://doi.org/10.1134/s106378261816008x
Autor:
V A Shkoldin, D V Levedev, A M Mozharov, D V Permyakov, L N Dvoretckaia, A A Bogdanov, A K Samusev, A O Golubok, I S Mukhin
Publikováno v:
Journal of Physics: Conference Series. 2086:012103
Hight-speed optical nanoemitters are of importance for on-chip optical data processing. A tunnel junctions can be a base for such light emitters, however such structures suffer from low quantum efficiency. One of the ways to improve efficiency of tun
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::684917117d1144203c45f825684ea690
https://doi.org/10.1088/1742-6596/2086/1/012103
https://doi.org/10.1088/1742-6596/2086/1/012103
Autor:
N A Solomonov, K N Novikova, I V Nadoyan, A M Mozharov, V A Shkoldin, Y S Berdnikov, I S Mukhin
Publikováno v:
Journal of Physics: Conference Series. 2086:012026
This work suggests a new approach to weighting the nanoscale objects placed at the tip of cantilever vibrating inside the camera of scanning electron microscope. In contrast to traditional approach to mass determination, we suggest tracing the shift
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ac8e47e2e89d5ff10e5331c511a93298
https://doi.org/10.1088/1742-6596/2086/1/012026
https://doi.org/10.1088/1742-6596/2086/1/012026
Autor:
D. V. Lebedev, L N Dvoretckaia, Ivan Mukhin, Dmitry V. Permyakov, V. A. Shkoldin, Andrey Bogdanov, Alexey M. Mozharov, A. O. Golubok, Anton Samusev
Publikováno v:
Journal of Physics: Conference Series. 2015:012139
Using of inelastic electron tunnelling is very promising approach to study of subwavelength photons and plasmons sources. Such sources are very important for improving of on-chip data processing. One of the ways for development of efficient and compa
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::630eb5b20243ba6d9078272c819ff428
https://doi.org/10.1088/1742-6596/2015/1/012139
https://doi.org/10.1088/1742-6596/2015/1/012139