Zobrazeno 1 - 10
of 10
pro vyhledávání: '"V A Karavanskiĭ"'
Publikováno v:
Physics of the Solid State. 51:2161-2165
Technological conditions providing the formation of CdSxSe1−x semiconductor crystal grains with sizes ranging from 2 to 8 nm in a silicate glass matrix have been determined. As the temperature of forming annealing increases, the size of crystal gra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5027d20b99e01835863abeaee3ecc1f4
https://doi.org/10.1134/s106378340910028x
https://doi.org/10.1134/s106378340910028x
Publikováno v:
Crystallography Reports. 54:379-385
An X-ray analysis of porous silicon layers (Sb-doped n +-Si(111)) obtained by anodic oxidation for different times with a current of 50 mA/cm2 is performed by the methods of double-crystal rocking curves and total external reflection. A nondestructiv
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a60084137321a2cb8c79272ffdec5cab
https://doi.org/10.1134/s1063774509030031
https://doi.org/10.1134/s1063774509030031
Publikováno v:
Crystallography Reports. 53:742-748
Porous Si layers, obtained by pulsed electrochemical etching of n-Si(001) substrates (resistivity 0.01 Ω cm) in a 1: 1 mixture of hydrofluoric acid and ethanol, have been investigated by high-resolution X-ray diffraction and electron microscopy. The
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f91de26ff0342cce23172f7d16304d76
https://doi.org/10.1134/s1063774508050039
https://doi.org/10.1134/s1063774508050039
Autor:
A. S. Prokhorov, V. A. Karavanskiĭ, Elena S. Zhukova, N. N. Melnik, Boris Gorshunov, T. N. Zavaritskaya, Igor E. Spektor
Publikováno v:
Physics of the Solid State. 49:2242-2250
The dielectric response (conductivity and permittivity) spectra of a series of nanoporous silicon samples prepared by anodization of low-resistivity single-crystal silicon are measured, for the first time, using terahertz and IR spectroscopy in the f
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7adc95febeff87a5bedfa3d0662fa29c
https://doi.org/10.1134/s1063783407120050
https://doi.org/10.1134/s1063783407120050
Publikováno v:
Soviet Journal of Quantum Electronics. 13:259-261
An investigation was made of the possibility of using the photoelectric effect in a Schottky barrier at a metal–semiconductor interface for detection of waveguide radiation. The dependences of the photocurrent and photo-emf on the power at the entr
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2d1524ef10099024f387be94a2431a36
https://doi.org/10.1070/qe1983v013n02abeh004138
https://doi.org/10.1070/qe1983v013n02abeh004138
Autor:
Yurii M Popov, V. A. Pletnev, A M Andriesh, V A Karavanskiĭ, Yu N Ivashchenko, V N Morozov, V. L. Smirnov
Publikováno v:
Soviet Journal of Quantum Electronics. 11:443-445
An investigation was made of mode matching in multilayer waveguide structures using inclined volume phase grating structures and methods of recording these were compared. An analysis was made of the feasibility of using these structures to match wave
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9712711d03a4a4e7e81615d4b10eea74
https://doi.org/10.1070/qe1981v011n04abeh006443
https://doi.org/10.1070/qe1981v011n04abeh006443
Publikováno v:
Soviet Journal of Quantum Electronics. 9:1330-1332
An investigation was made of the matching between various types of semiconductor sources and thin-film planar and stripe waveguides by the tunneling of the optical energy via a prism coupling device and via a system comprising an optical fiber and a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::75c9d3a0988f2882e8805b19bc53a683
https://doi.org/10.1070/qe1979v009n10abeh009546
https://doi.org/10.1070/qe1979v009n10abeh009546
Publikováno v:
Soviet Journal of Quantum Electronics. 15:1297-1299
An analysis is made of smooth junctions in optical waveguides incorporating metallic media. The conditions for conversion of dielectric waveguide modes into plasma surface waves are studied. It is shown experimentally that smooth junctions can be use
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8b0a7adb173a13a024518441b0fefa2e
https://doi.org/10.1070/qe1985v015n09abeh007746
https://doi.org/10.1070/qe1985v015n09abeh007746
Publikováno v:
Soviet Journal of Quantum Electronics. 10:783-784
Communication channel crosstalk was investigated in a Y-shaped frequency-division data channel multiplexer of a fiber-optic communication line.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::080f37359c15581849cf87b5c33dcac7
https://doi.org/10.1070/qe1980v010n06abeh010308
https://doi.org/10.1070/qe1980v010n06abeh010308
Publikováno v:
Soviet Journal of Quantum Electronics. 18:896-897
An experimental study was made of the processes of intermode conversion of surface light waves in semiconductor waveguides in which diffraction gratings were induced by ultrashort (~ 20 ps) light pulses. The conversion efficiency was determined as a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::f48aceb7d17815a9d60f53a9e93a0b86
https://doi.org/10.1070/qe1988v018n07abeh012321
https://doi.org/10.1070/qe1988v018n07abeh012321