Zobrazeno 1 - 10
of 22
pro vyhledávání: '"V A Karasyuk"'
Publikováno v:
New Journal of Physics, Vol 23, Iss 10, p 103008 (2021)
Global quantum networks will benefit from the reliable fabrication and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon provide a promising photon-spin interface due to their narrow O -band
Externí odkaz:
https://doaj.org/article/999360a9d4b24e9a9b973ca502501aa2
Autor:
Evan MacQuarrie, Daniel B. Higginbottom, S. Roorda, Stephanie Simmons, C. Chartrand, V. A. Karasyuk, K. J. Morse
Publikováno v:
New Journal of Physics. 23:103008
Global quantum networks will benefit from the reliable fabrication and control of high-performance solid-state telecom photon-spin interfaces. T radiation damage centres in silicon provide a promising photon-spin interface due to their narrow O-band
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::be296fedae02d2304c44aae9c64d78cd
https://doi.org/10.1088/1367-2630/ac291f
https://doi.org/10.1088/1367-2630/ac291f
Autor:
Anthony J. SpringThorpe, M. L. W. Thewalt, D. A. Harrison, Simon P. Watkins, D. J. S. Beckett, J. A. H. Stotz, V. A. Karasyuk
Publikováno v:
Physical Review B. 60:15527-15530
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bd016c4c727470bf9fe725d818ca68c8
https://doi.org/10.1103/physrevb.60.15527
https://doi.org/10.1103/physrevb.60.15527
Autor:
Anthony J. SpringThorpe, V. A. Karasyuk, D. A. Harrison, G. C. Hillier, J. Hu, D. J. S. Beckett, Mike L. W. Thewalt, Simon P. Watkins, I. C. Bassignana
Publikováno v:
Journal of Applied Physics. 84:6305-6311
Variations in the lattice parameters of commercially available undoped and Si-doped GaAs substrates have been studied using high resolution photoluminescence (PL) spectroscopy. The lattice parameter difference between high quality epitaxial layers of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::626b978db6d361e744038b85cb18127c
https://doi.org/10.1063/1.368953
https://doi.org/10.1063/1.368953
Publikováno v:
physica status solidi (b). 210:353-359
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::78f1b1d0ac738532aae96d11f220a3ab
https://doi.org/10.1002/(sici)1521-3951(199812)210:2<353::aid-pssb353>3.0.co
https://doi.org/10.1002/(sici)1521-3951(199812)210:2<353::aid-pssb353>3.0.co
Publikováno v:
Physical Review B. 56:15672-15684
Photoluminescence of excitons bound to Al, Ga, In, and Tl acceptors in Si crystals subjected to 〈001〉, 〈111〉, or 〈110〉 uniaxial stress was studied at liquid-He temperatures with 0.0025-meV spectral resolution. The deformation-potential co
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e2eae0309d1f533eae13267ad9df20ed
https://doi.org/10.1103/physrevb.56.15672
https://doi.org/10.1103/physrevb.56.15672
Publikováno v:
Physical Review B. 54:10543-10558
Photoluminescence of excitons bound to Al, Ga, In, and Tl acceptors in Si was studied at liquid-He temperatures in magnetic fields up to 14.5 T with 〈001〉, 〈111〉, and 〈110〉 orientations with 0.0025-meV spectral resolution. All details of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::72832b01e236e2381f5d0e5e51b4ef4d
https://doi.org/10.1103/physrevb.54.10543
https://doi.org/10.1103/physrevb.54.10543
Publikováno v:
Solid State Communications. 97:137-142
Using photoluminescence spectroscopy in magnetic fields up to 12 T, we show that the very shallow isoelectronic centers B41 (1.15090 eV principal no phonon line) created by a neutron irradiation in a phosphorus-doped silicon grown in a hydrogen atmos
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::168f1ed288d47e5fc6e76bda775ff758
https://doi.org/10.1016/0038-1098(95)00614-1
https://doi.org/10.1016/0038-1098(95)00614-1
Publikováno v:
Physical Review B. 51:4882-4888
Photoluminescence spectra of excitons bound to isoelectronic defects ${\mathit{B}}_{80}$ and ${\mathit{B}}_{19}^{1}$ (1.147 00- and 1.143 14-eV principal no-phonon lines, respectively), created in phosphorus-doped silicon grown in a hydrogen atmosphe
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9070cedbc9b762b8e4f76f4c3daabca1
https://doi.org/10.1103/physrevb.51.4882
https://doi.org/10.1103/physrevb.51.4882
Publikováno v:
Solid State Communications. 93:379-382
The results of near infra-red piezo-photoluminescence, photoluminescence excitation, and absorption spectroscopy of silicon doped with Al, Ga, and In performed at 2 K and 0.4 K show that the ground state of these shallow acceptors is split by 0.10 ±
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::95df9f6727736786fc57df8dc5a0d90f
https://doi.org/10.1016/0038-1098(94)00802-7
https://doi.org/10.1016/0038-1098(94)00802-7