Zobrazeno 1 - 10
of 41
pro vyhledávání: '"V A Irkha"'
Autor:
G. I. Dzhardimalieva, I. E. Uflyand, V. A. Zhinzhilo, E. G. Drogan, V. E. Burlakova, V. A. Irkha
Publikováno v:
Russian Journal of General Chemistry. 92:1983-1994
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6037d1e5a26ddf37bcadafad984a4fb4
https://doi.org/10.1134/s1070363222100127
https://doi.org/10.1134/s1070363222100127
Publikováno v:
Chemical and Petroleum Engineering. 58:449-456
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a60057098098f4a854b5f51b606de46d
https://doi.org/10.1007/s10556-022-01113-0
https://doi.org/10.1007/s10556-022-01113-0
Publikováno v:
Chemical and Petroleum Engineering. 58:185-195
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::66e5ded04fe9f2365997565bf8948671
https://doi.org/10.1007/s10556-022-01074-4
https://doi.org/10.1007/s10556-022-01074-4
Publikováno v:
Chemical and Petroleum Engineering. 57:911-919
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::8ec32e53b26ad43bf2a0d2137622473f
https://doi.org/10.1007/s10556-022-01026-y
https://doi.org/10.1007/s10556-022-01026-y
Publikováno v:
Photoelectronics. :27-34
The electrophysical properties in air and in the atmosphere with ammonia vapor content of nanosized films of ZnO and SnO2 structured in the process of production using polymers were studied. The investigated electrophysical properties of those films
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3e2acd70892ba596a190d397fc9b5d2
https://doi.org/10.18524/0235-2435.2021.30.262802
https://doi.org/10.18524/0235-2435.2021.30.262802
Publikováno v:
Chemical and Petroleum Engineering. 57:621-629
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::29de399953c66f118a6c7ea3394ce462
https://doi.org/10.1007/s10556-021-00985-y
https://doi.org/10.1007/s10556-021-00985-y
Publikováno v:
Tsvetnye Metally. :44-49
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::3908b6e507f76aea8374ef906e011870
https://doi.org/10.17580/tsm.2021.06.06
https://doi.org/10.17580/tsm.2021.06.06
Publikováno v:
Solid State Phenomena. 316:999-1003
The results of the presented studies demonstrate the possibility of using two and three component solid solutions, based on elements of the A3B5 groups, as thin barrier layers to cover an array of structured InAs quantum dots for photoactive heteroin
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::80a1fa598175de2f33a346b3354ca8f9
https://doi.org/10.4028/www.scientific.net/ssp.316.999
https://doi.org/10.4028/www.scientific.net/ssp.316.999
Publikováno v:
Advanced Engineering Research, Vol 13, Iss 5-6, Pp 77-84 (2013)
The physical and mathematical mass-transfer model of the ion-beam crystallization method is developed. The derivatization of photoactive structures Si(n+)/Si(p)/Si(p+) on 100 mm substrates through ion-beam crystallization is considered. The optimum c
Externí odkaz:
https://doaj.org/article/aa1617ad7fdc423fb3e60d87f4fd99ad
Publikováno v:
Journal of Nanotechnology, Vol 2016 (2016)
A new ion-beam sputtering technique for obtaining self-assembled InAs quantum dots on GaAs (001) substrates is proposed. The current paper demonstrates that a temperature increase in a range from 450 to 550°C at ion current of 120 μA and energy of
Externí odkaz:
https://doaj.org/article/3e36ac49acdc4adfab0c55f74977e565