Zobrazeno 1 - 10
of 47
pro vyhledávání: '"V A Felitsyn"'
Testing for Enhanced Low Dose Rate Sensitivity and Reduced Low Dose Rate Sensitivity Bipolar Devices
Autor:
V. A. Telets, Alexander S. Bakerenkov, Alexander S. Rodin, A. I. Zhukov, Vladimir V. Belyakov, I. D. Kovsharov, V A Felitsyn, V.S. Pershenkov
Publikováno v:
2021 IEEE 32nd International Conference on Microelectronics (MIEL).
A possible influence of location of the effective Fermi level in the forbidden gap of the surface base region on dose rate sensitivity of bipolar integrated circuits was described. Also, it is shown, that the position of the effective Fermi level lea
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7dc69c9227270a4d577d9a16e1c4725a
https://doi.org/10.1109/miel52794.2021.9569132
https://doi.org/10.1109/miel52794.2021.9569132
Autor:
Alexander S. Bakerenkov, A. I. Zhukov, Viacheslav S. Pershenkov, V A Felitsyn, Alexander S. Rodin
Publikováno v:
2021 IEEE 32nd International Conference on Microelectronics (MIEL).
Dependences of LM 111 voltage comparator input current on time during post-radiation annealing are investigated. The technique based on the Gummel- Poon model of a bipolar transistor for numerical simulation of the annealing process, taking into acco
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::a46835da7e49a2dc5767e830593b9a9f
https://doi.org/10.1109/miel52794.2021.9569089
https://doi.org/10.1109/miel52794.2021.9569089
Publikováno v:
2021 IEEE 32nd International Conference on Microelectronics (MIEL).
We investigated the possibilities of using field-effect transistors to measure the dose rate of ionizing radiation using the example of an n-channel MOSFET. There were measured the gate voltage of transistors as function of ionizing dose at const val
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67797777f6573c5b2fce771d8d911e8b
https://doi.org/10.1109/miel52794.2021.9569092
https://doi.org/10.1109/miel52794.2021.9569092
Autor:
Viacheslav S. Pershenkov, Alexander S. Bakerenkov, Vitaliy A. Telets, V A Felitsyn, Vladimir V. Belyakov, Alexander S. Rodin
Publikováno v:
Radiation Effects and Defects in Solids. 174:320-328
The application of elevated temperature irradiation for simulating of low dose rate degradation in bipolar devices was considered. The analysis was performed in the framework of the conversion model, which enables to estimate the radiation degradatio
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::55ac1cedc0d941a4e66057210a819760
https://doi.org/10.1080/10420150.2018.1564921
https://doi.org/10.1080/10420150.2018.1564921
Autor:
V. A. Telets, A. I. Zhukov, Alexander S. Rodin, Vladimir V. Belyakov, Alexander S. Bakerenkov, Viacheslav S. Pershenkov, V A Felitsyn, Nikita S. Glukhov
Publikováno v:
2020 IEEE Radiation Effects Data Workshop (in conjunction with 2020 NSREC).
The performance of the total ionizing dose sensor based on a bipolar transistor were researched in this work.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::6b6a951c83716fff3387f0458f6dee36
https://doi.org/10.1109/redw51883.2020.9325848
https://doi.org/10.1109/redw51883.2020.9325848
Autor:
Alexander S. Bakerenkov, Viacheslav S. Pershenkov, V A Felitsyn, V. A. Telets, Alexander S. Rodin, Vladimir V. Belyakov
Publikováno v:
IFMBE Proceedings ISBN: 9783030318659
Modification of the ELDRS (Enhanced Low Dose Rate Sensitivity) conversion model is presented. The effect of the oxide trapped charge on the value of the oxide electric field and the yield of the oxide charge takes into account. It leads to dependence
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b10d5578238c773fb3c9a152d3411d6d
https://doi.org/10.1007/978-3-030-31866-6_13
https://doi.org/10.1007/978-3-030-31866-6_13
Autor:
V. A. Telets, Alexander S. Rodin, V A Felitsyn, Alexander S. Bakerenkov, Viacheslav S. Pershenkov
Publikováno v:
IFMBE Proceedings ISBN: 9783030318659
Real time dependence of operation temperature, which is typical for space environment, was taken into account in the numerical simulation of radiation degradation of LM111 bipolar voltage comparator input current. The technique and results of perform
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2c132af9e1555e035855bbe396b0de83
https://doi.org/10.1007/978-3-030-31866-6_143
https://doi.org/10.1007/978-3-030-31866-6_143
Autor:
B. Podlepetsky, Alexander S. Rodin, Viacheslav S. Pershenkov, V A Felitsyn, Vladimir V. Belyakov, Alexander S. Bakerenkov
Publikováno v:
IFMBE Proceedings ISBN: 9783030318659
We investigated the radiation sensitivity of dose-metrical sensors based on n-channel MOSFETs taking into account the effects of temperature and electrical modes. There were measured the output voltages V being equal to the gate voltage VG of MOSFET-
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::20d29902e2d5a563b0377f7130511626
https://doi.org/10.1007/978-3-030-31866-6_73
https://doi.org/10.1007/978-3-030-31866-6_73
Autor:
Viacheslav S. Pershenkov, N. Gluhov, V A Felitsyn, Alexander S. Bakerenkov, A. I. Zhukov, Vladimir V. Belyakov, V. A. Telets, Alexander S. Rodin
Publikováno v:
2019 IEEE 31st International Conference on Microelectronics (MIEL).
Radiation degradation rate of input offset voltage in bipolar operational amplifiers was estimated experimentally. High degradation rate was observed in devices with high input offset voltage initial values and temperature drifts. Obtained results we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::67812d1cfb94e5b657f44f3cb2f37ea5
https://doi.org/10.1109/miel.2019.8889637
https://doi.org/10.1109/miel.2019.8889637
Autor:
V. A. Telets, Alexander S. Bakerenkov, Alexander S. Rodin, V A Felitsyn, Viacheslav S. Pershenkov, Vladimir V. Belyakov
Publikováno v:
2019 IEEE 31st International Conference on Microelectronics (MIEL).
Possible physical mechanism of reduced low dose rate sensitivity in bipolar devices is described. The reduced sensitivity can be connected with a specific position of effective Fermi level relatively acceptor and donor radiation-induced interface tra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9fd663c663dfdf8dc634396894f3ad53
https://doi.org/10.1109/miel.2019.8889624
https://doi.org/10.1109/miel.2019.8889624