Zobrazeno 1 - 10
of 51
pro vyhledávání: '"V A, Stel'makh"'
Autor:
E. R. Romanova, V. S. Stel’makh
Publikováno v:
Вестник университета, Vol 0, Iss 3, Pp 44-48 (2019)
Over the past fifteen years, the pharmaceutical industry is actively developing both in Russia and abroad. At the same time, the economic condition of pharmaceutical enterprises in the regions is heterogeneous. A practical continuation of the author
Externí odkaz:
https://doaj.org/article/d847ef1f5b7d4329ae6718dd1421ffe4
Autor:
E. R. Romanova, V. S. Stel’Makh
Publikováno v:
Управление, Vol 6, Iss 4, Pp 47-54 (2018)
From the position of the modern theory of crisis management, a hypothesis of the presence of a critical point in the development of a socio-economic system has proposed. Depending on the severity of the crisis, limited resources and time, the relatio
Externí odkaz:
https://doaj.org/article/782d8919ad5540d89c12b25883e85159
Publikováno v:
Терапевтический архив, Vol 86, Iss 11, Pp 87-92 (2014)
The paper describes a clinical case of pulmonary vasculitis caused by hepatitis C virus (HCV). Its diagnosis was established on the basis of in-depth laboratory testing and an investigation of the molecular biological markers of viremia (polymerase c
Externí odkaz:
https://doaj.org/article/ff0fb2f3942d439383c461302b25abeb
Autor:
V V Stel'makh, V K Kozlov
Publikováno v:
Терапевтический архив, Vol 85, Iss 4, Pp 71-76 (2013)
AIM: To study the impact of infusion therapy with the metabolic modulator remaxol on lipid metabolic parameters and target organ (liver, kidney) function in metabolic syndrome (MS)/MATERIAL AND METHODS: The investigation enrolled 90 patients (54 men
Externí odkaz:
https://doaj.org/article/e7b8b63deaa44198abb949e38365d061
Autor:
V. G. Stel’makh, I. D. Yadgarov
Publikováno v:
Letters on Materials. 9:344-348
Publikováno v:
Современные тенденции развития физики полупроводников: достижения, проблемы и перспективы.
Publikováno v:
Inorganic Materials. 50:365-368
We have synthesized a novel TiSi2(C49)/Si silicon-technology-based semiconductor structure which possesses both photoelectric and luminescent properties and is potentially attractive for use in optoelectronic couples. According to IR spectroscopy res
Publikováno v:
Applied Solar Energy. 44:276-280
The results of papers dealing with computation of the recombination processes of nonequilibrium electrons and holes in semiconductors with deep impurities are reviewed. It is shown that at high excitation levels, when many defects and defect-impurity
Publikováno v:
JETP Letters. 84:547-550
A room-temperature local magnetic order has been detected in silicon implanted with high-energy Kr+ and Xe+ ions. The evidence of the presence of the local magnetic order are the electron magnetic resonance lines with g-factor values of about 2.2 and
Publikováno v:
Technical physics
Processes of defect formation as a result of scattering of carbon atoms with energies of 10 and 100 eV by graphene at different angles of incidence are studied by the molecular dynamics method. The possibility of formation of a carbon adatom and vaca