Zobrazeno 1 - 10
of 78
pro vyhledávání: '"V A, Gladkov"'
Autor:
A. V. Vasyaev, D. V. Makarychev, M. N. Borovkov, S. V. Babushkin, S. E. Belov, S. V. Novikov, I. B. Korobov, G. G. Afrikantov, D. L. Zverev, S. V. Motkov, V. V. Gladkov
Publikováno v:
Atomic Energy. 129:54-65
OKBM Afrikantov possesses unique experience in developing different types of highly reliable pumping equipment. The pumping equipment developed at the enterprise possesses high safety and reliability metrics at minimum operating cost. OKBM accomplish
Publikováno v:
Izvestiâ Vysših Učebnyh Zavedenij i Ènergetičeskih ob Edinennij SNG. Ènergetika, Vol 0, Iss 5, Pp 38-42 (2003)
The paper shows that while a streamer is moving between electrodes their density and streamer current are increasing as an exponential law due to photoionization effect. This phenomena may be interpreted as a presence of photoionization instability i
Externí odkaz:
https://doaj.org/article/775d6c9b67234233920b34d9098cdb25
Autor:
V. I. Gladkov, Ph. V. Kiryukhantsev-Korneev, Josphat Phiri, M. G. Yakovlev, E. A. Levashov, S. N. Ratnikov
Publikováno v:
Protection of Metals and Physical Chemistry of Surfaces. 55:913-923
The results of structural studies and mechanical, abrasion, and erosion tests of single-layer and multi-layer TiN, Ti–Cr–Al–N, and Cr–Al–Ti–N coatings deposited on a closed-field unbalanced magnetron sputtering (CFUBMS) system using the i
Publikováno v:
Measurement Techniques. 61:37-41
We develop a device for high-precision measurements and regulation of low flow rates of special liquids with different properties. The application of this device enables one to automate the process of high-precision mixing and dosing of various liqui
Publikováno v:
Izmeritel`naya Tekhnika. :28-31
Publikováno v:
Polythematic Online Scientific Journal of Kuban State Agrarian University.
Publikováno v:
Polythematic Online Scientific Journal of Kuban State Agrarian University.
Publikováno v:
Semiconductors. 48:1619-1625
The effect of the hybridization of quantum states on electron transport in a two-barrier quantum well δ-doped through a spacer layer at the limit of heavy doping is shown theoretically and experimentally. A method for increasing the electron mobilit
Autor:
M. M. Grekhov, V. P. Gladkov, I. S. Vasil’evskii, N. I. Kargin, A. N. Vinichenko, M.N. Strikhanov
Publikováno v:
Semiconductors. 48:1226-1232
Graded InyGa1 − yAs quantum well epitaxial technology is developed for engineering the band potential profile. The crystal structure of the samples is clarified by high-resolution X-ray diffraction. The influence of quantum-well bending on the crys
Publikováno v:
Hyperfine Interactions. 226:365-373
Mossbauer spectra of fine-grained hot-pressed beryllium and coarse-grained beryllium samples containing different amounts of impurities were obtained after homogenization and after annealing for different durations. Mossbauer spectra of solid solutio