Zobrazeno 1 - 10 of 325 pro vyhledávání: '"V A, Gladkov"'
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Typology of the identity of the offender-corrupt / V. S. Gladkov
Гладков, А. В. Типология личности преступника коррупционной направленности / А. В. Гладков // Вестник Академии МВД Республики Беларусь. - 201
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=od______4240::8f1c86b59c8f0355cb421b3619f77cf3
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2
Pumping Equipment for Nuclear Energy and the Non-Nuclear Market
Autor: A. V. Vasyaev, D. V. Makarychev, M. N. Borovkov, S. V. Babushkin, S. E. Belov, S. V. Novikov, I. B. Korobov, G. G. Afrikantov, D. L. Zverev, S. V. Motkov, V. V. Gladkov
Publikováno v: Atomic Energy. 129:54-65
OKBM Afrikantov possesses unique experience in developing different types of highly reliable pumping equipment. The pumping equipment developed at the enterprise possesses high safety and reliability metrics at minimum operating cost. OKBM accomplish
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::4b73d70e49deebb3453fdf0132a740be
https://doi.org/10.1007/s10512-021-00719-6
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3
Akademický článek
Photoionization Instability of Streamer Channel as Possible Reason of Break-Down of Long Air Gaps by Nanosecond Voltage Impulses
Autor: V. S. Gladkov, S. I. Levchenko, V. V. Ognivenko, A. V. Pashchenko
Publikováno v: Izvestiâ Vysših Učebnyh Zavedenij i Ènergetičeskih ob Edinennij SNG. Ènergetika, Vol 0, Iss 5, Pp 38-42 (2003)
The paper shows that while a streamer is moving between electrodes their density and streamer current are increasing as an exponential law due to photoionization effect. This phenomena may be interpreted as a presence of photoionization instability i
Externí odkaz: https://doaj.org/article/775d6c9b67234233920b34d9098cdb25
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4
Erosion and Abrasion Resistance, Mechanical Properties, and Structure of the TiN, Ti–Cr–Al–N and Cr–Al–Ti–N Coatings Deposited by CFUBMS
Autor: V. I. Gladkov, Ph. V. Kiryukhantsev-Korneev, Josphat Phiri, M. G. Yakovlev, E. A. Levashov, S. N. Ratnikov
Publikováno v: Protection of Metals and Physical Chemistry of Surfaces. 55:913-923
The results of structural studies and mechanical, abrasion, and erosion tests of single-layer and multi-layer TiN, Ti–Cr–Al–N, and Cr–Al–Ti–N coatings deposited on a closed-field unbalanced magnetron sputtering (CFUBMS) system using the i
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::d099c5915f434f195fcd57bc6d21466c
https://doi.org/10.1134/s2070205119050125
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5
High-Precision Measurements and Regulation for Low Liquid Flow Rates
Autor: V. M. Gladkov, V. V. Starkov, A. M. Makarov, O. S. Khar’kin, I. V. Volkov, A. K. Ivanyuk
Publikováno v: Measurement Techniques. 61:37-41
We develop a device for high-precision measurements and regulation of low flow rates of special liquids with different properties. The application of this device enables one to automate the process of high-precision mixing and dosing of various liqui
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::610dd9e9ff092deb3bcf6718f6645c4a
https://doi.org/10.1007/s11018-018-1384-7
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9
Increase of the electron mobility in HEMT heterostructures with composite spacers containing AlAs nanolayers
Autor: N. I. Kargin, I. S. Vasil’evskii, M.N. Strikhanov, V. P. Gladkov, A. N. Vinichenko
Publikováno v: Semiconductors. 48:1619-1625
The effect of the hybridization of quantum states on electron transport in a two-barrier quantum well δ-doped through a spacer layer at the limit of heavy doping is shown theoretically and experimentally. A method for increasing the electron mobilit
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::761b8fbfb892a564774c9b84f0ab8e12
https://doi.org/10.1134/s1063782614120227
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10
Technology and electronic properties of PHEMT AlGaAs/In y(z)Ga1 − y(z)As/GaAs compositionally graded quantum wells
Autor: M. M. Grekhov, V. P. Gladkov, I. S. Vasil’evskii, N. I. Kargin, A. N. Vinichenko, M.N. Strikhanov
Publikováno v: Semiconductors. 48:1226-1232
Graded InyGa1 − yAs quantum well epitaxial technology is developed for engineering the band potential profile. The crystal structure of the samples is clarified by high-resolution X-ray diffraction. The influence of quantum-well bending on the crys
Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::f2c3573fb0786ce2121ef0883fc04dea
https://doi.org/10.1134/s1063782614090255
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