Zobrazeno 1 - 10
of 36
pro vyhledávání: '"V .R. Rasulov"'
Publikováno v:
Semiconductors. 56:396-401
Publikováno v:
Russian Physics Journal.
Autor:
Iqboljon Mamirjonovich Eshboltaev, Rustam Yavkachovich Rasulov, Mavzurjon Xursandboyevich Qo’chqorov, V. R. Rasulov
Publikováno v:
EPRA International Journal of Multidisciplinary Research (IJMR). :205-213
The spectral dependences of the coefficients of interband three-photon optical transitions for InSb and for some optical transitions are calculated and a numerical analysis of the coefficient of interband three-photon absorption of light is carried o
Publikováno v:
European Journal of Applied Physics. 3:51-57
The spectral dependences of the coefficients of interband three-photon optical transitions for InSb and for some optical transitions are calculated and a numerical analysis of the coefficient of interband three-photon absorption of light is carried o
Publikováno v:
Russian Physics Journal. 63:2025-2030
The linear-circular dichroism of two- and three-photon absorption of light in semiconductors of hole conductivity with cubic symmetry is theoretically investigated. The matrix elements of two- and three-photon optical transitions occurring between th
Autor:
Mavzurjon Xurshidboyevich Qo'chqorov, Nurillo Kodirov, V. R. Rasulov, Rustam Yavkachovich Rasulov, Islombek Arabboyevich Muminov
Publikováno v:
European Science Review. :52-56
Autor:
Islombek Arabboyevich Muminov, V. R. Rasulov, Rustam Yavkachovich Rasulov, Mavzurjon Xurshidboyevich Qo'chqorov, Forrux Kasimov
Publikováno v:
European Science Review. :48-51
Autor:
Rustam Yavkachovich Rasulov, Islombek Arabboyevich Muminov, Baxodir Baxromovich Axmedov, V. R. Rasulov, Shoxrux Niyozov
Publikováno v:
European Science Review. :44-47
Publikováno v:
Semiconductors. 54:1381-1387
The linear-circular dichroism of two- and three-photon absorption in p-type cubic-symmetry semiconductors is theoretically studied. The matrix elements of two- and three-photon optical transitions between subbands of the semiconductor valence band ar
Publikováno v:
Russian Physics Journal. 63:537-546
The transparency coefficients of a semiconductor structure consisting of alternating asymmetric potential barriers and wells, where the Bastard condition is taken into account, are calculated. It is shown that in the structure, an oscillation of the