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CMOS technologies in the 100nm range for rad-hard front-end electronics in future collider experiments

Autor: V. Speziali, Massimo Manghisoni, Lodovico Ratti, Gianluca Traversi, Luigi Gaioni, Valerio Re

Publikováno v: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 596:107-112

130 nm and 90 nm CMOS processes are going to be used in the design of mixed-signal integrated circuits for the readout of detectors in the future generation of HEP experiments. In applications such as inner SLHC detectors, these ultra-deep submicron

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::789bed6f09c02e7691df1a170d1ffde6
https://doi.org/10.1016/j.nima.2008.07.058

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Recent developments in 130 nm CMOS monolithic active pixel detectors

Publikováno v: Nuclear Physics B - Proceedings Supplements. 172:20-24

We developed monolithic active pixel detectors, by exploiting the triple well option available in a deep-submicron CMOS process. The novel features are the full analog signal processing and digital functionality implemented at the pixel level. The ch

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::657ec841cda6c9b81d8d867a688b5526
https://doi.org/10.1016/j.nuclphysbps.2007.07.004

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CMOS MAPS with pixel level sparsification and time stamping capabilities for applications at the ILC

Autor: Valerio Re, Massimo Manghisoni, V. Speziali, Gianluca Traversi, Lodovico Ratti

Publikováno v: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 581:291-294

This paper is intended to discuss the features of a novel kind of monolithic active pixel sensors (MAPS) in deep submicron CMOS technology (130 nm minimum feature size) for use in charged particle trackers and vertex detectors. As compared to convent

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::77d04cae4b84cc0607b14609685d5ca2
https://doi.org/10.1016/j.nima.2007.07.125

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Development of deep N-well monolithic active pixel sensors in a CMOS technology

Publikováno v: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 572:277-280

By exploiting the triple-well option available in a deep-submicron CMOS process, we developed monolithic active pixel sensors (MAPS) with the unique features of full analog signal processing and digital functionality implemented at the pixel level. A

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::a5c2481d6259328d1ae3d55ac3a1fc6e
https://doi.org/10.1016/j.nima.2006.10.302

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A new approach to the design of monolithic active pixel detectors in triple well CMOS technology

Publikováno v: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 569:61-64

We present a new approach to the design of monolithic active pixel sensors (MAPS) in CMOS technology. By exploiting the triple well option, available in modern deep-submicron processes, it was possible to implement at the pixel level a full analog si

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::9a8d1ed96b205e1ab17c031e9cf58b62
https://doi.org/10.1016/j.nima.2006.09.013

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Design criteria for low noise front-end electronics in the 0.13μm CMOS generation

Autor: Lodovico Ratti, Massimo Manghisoni, Gianluca Traversi, Valerio Re, V. Speziali

Publikováno v: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 568:343-349

The goal of this work is to provide an extensive analysis of the noise performances which can be attained by detector front-end integrated circuits in the 0.13 μm CMOS node. To estimate the noise limits of a front-end system in this CMOS generation,

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6d1fc99f8296e6620d25c6f5067982ee
https://doi.org/10.1016/j.nima.2006.06.003

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Monolithic pixel detectors in a CMOS technology with sensor level continuous time charge amplification and shaping

Autor: Lodovico Ratti, G. Calderini, Marcello Giorgi, R. Cenci, Fabio Morsani, Valerio Re, V. Speziali, F. Forti, Gianluca Traversi, G. Rizzo, Massimo Manghisoni, S. Bettarini

Publikováno v: Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment. 568:159-166

This work studies the feasibility of a new implementation of CMOS monolithic active pixel sensors (MAPS) for applications to charged particle tracking. As compared to standard three MOSFET MAPS, where the charge signal is readout by a source follower

Externí odkaz: https://explore.openaire.eu/search/publication?articleId=doi_________::289c14055f1943c853a9db5e2545ecbb
https://doi.org/10.1016/j.nima.2006.05.225

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