Zobrazeno 1 - 10
of 59
pro vyhledávání: '"V, Schwegler"'
Publikováno v:
Journal of Materials Science: Materials in Electronics. 13:659-664
Different substrates for gallium nitride growth are discussed. The commercially relevant substrates, silicon carbide and sapphire, and the two most promising alternatives, silicon and gallium nitride, are compared in terms of suitability for epitaxia
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::44145c59ae0e2dd4cd215f53758ffd28
https://doi.org/10.1023/a:1020614310842
https://doi.org/10.1023/a:1020614310842
Publikováno v:
physica status solidi (a). 188:127-130
In this work, we investigate the extraction efficiency for UV emitting rectangular 300 x 300 μm 2 gallium nitride (GaN) based light emitting diodes (LEDs) by simulation with a raytracer tool. It is shown that the extraction efficiency depends strong
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::acdf68ff65ada2b19c52c3a229cc5a29
https://doi.org/10.1002/1521-396x(200111)188:1<127::aid-pssa127>3.0.co
https://doi.org/10.1002/1521-396x(200111)188:1<127::aid-pssa127>3.0.co
Autor:
R. Gruhler, M. Scherer, V. Schwegler, O. Hollricher, Gokhan Ulu, M. Seyboth, Markus Kamp, M.S. Unlu, Franz Eberhard, C. Kirchner
Publikováno v:
Journal of Crystal Growth. 230:554-557
Dry-etching of laser facets is commonly used for (InAl)GaN/sapphire-based structures since the epitaxial planes of the nitride layers are rotated with respect to the substrate planes making cleaving impractical. To achieve steep and smooth facets by
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::cde8fd3a5434747abe45774255329b3f
https://doi.org/10.1016/s0022-0248(01)01296-9
https://doi.org/10.1016/s0022-0248(01)01296-9
Autor:
Gokhan Ulu, S.-S. Schad, Stefan Bader, Hans-Juergen Lugauer, Markus Kamp, M.S. Unlu, Volker Härle, V. Schwegler, M.K. Emsley, Andreas Weimar, M. Scherer, Alfred Lell, Frank Kühn, Berthold Hahn
Publikováno v:
Journal of Crystal Growth. 230:512-516
The influence of the mirror reflectivity on the L–I characteristics of GaN-based lasers has been studied. A cleaved, Al-coated fiber is used as an external micro-mirror to control the reflectance of the end facets allowing for a continuous adjustme
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::bc291e1422607ac225b601eba0f4d295
https://doi.org/10.1016/s0022-0248(01)01299-4
https://doi.org/10.1016/s0022-0248(01)01299-4
Autor:
M. Seyboth, H.Y.A. Chung, M. Scherer, M. Drechsler, Markus Kamp, V. Schwegler, A Pelzmann, C. Kirchner
Publikováno v:
Journal of Crystal Growth. 230:549-553
In this article, multiple-step rapid thermal annealing (RTA) processes for the activation of Mg doped GaN are compared with conventional single-step RTA processes. The investigated multiple-step processes consist of a low temperature annealing step a
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::5d380971cee20eeb06db037eeec80159
https://doi.org/10.1016/s0022-0248(01)01302-1
https://doi.org/10.1016/s0022-0248(01)01302-1
Autor:
Ch. Kirchner, H.Y.A. Chung, C. Wang, K.J.E. Ebeling, Markus Kamp, Michael Heuken, M. Seyboth, R. Beccard, M. Scherer, V. Schwegler
Publikováno v:
physica status solidi (a). 180:257-260
In this paper, Hydride Vapour Phase Epitaxy (HVPE) of GaN layers under reduced pressures is reported. First results show that the HVPE grown GaN layers exhibit excellent electrical, crystallographic and optical quality. By reducing the reactor pressu
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0e63851ef931305ff5a43ca6e61e8765
https://doi.org/10.1002/1521-396x(200007)180:1<257::aid-pssa257>3.0.co
https://doi.org/10.1002/1521-396x(200007)180:1<257::aid-pssa257>3.0.co
Autor:
D.G Ebling, V. Schwegler, C. Kirchner, Markus Kamp, K. Bitzer, A. Link, Rolf Sauer, Wolfgang Limmer, Klaus-Werner Benz
Publikováno v:
Journal of Applied Physics. 86:6256-6260
The frequencies and dampings of the zone-center optical phonons E2 and A1(LO) in wurtzite-type GaN and AlN layers have been measured by Raman spectroscopy in the temperature range from 85 to 760 K. The GaN layer was grown by metalorganic vapor phase
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::b3cf4485adb5c80b4f1fac2ce22bd583
https://doi.org/10.1063/1.371681
https://doi.org/10.1063/1.371681
Autor:
C. Kirchner, Rolf Sauer, Klaus Thonke, V. Schwegler, M. Grehl, Michał Leszczyński, Izabella Grzegory, S. Porowski, K. Kornitzer, Markus Kamp
Publikováno v:
Physica B: Condensed Matter. :66-69
Homoepitaxial GaN layers grown by MOVPE on a pre-treated GaN single crystal are almost strain-free, have very low defect densities and low impurity levels. These layers show strong, extraordinarily sharp photoluminescence spectra. Especially, the don
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d9207468ff05d76e09a7d4ac3f3f01bb
https://doi.org/10.1016/s0921-4526(99)00408-1
https://doi.org/10.1016/s0921-4526(99)00408-1
Autor:
Rolf Sauer, A. Link, Wolfgang Limmer, A. N. Turkin, A. E. Yunovich, M. Seyboth, V. E. Kudryashov, Sven Schad, V. Schwegler, Markus Kamp, Karl Joachim Ebeling, Ulrich Stempfle, C. Kirchner
Publikováno v:
physica status solidi (a). 176:783-786
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9b6d373d9604cd63341e08a4a02e1766
https://doi.org/10.1002/(sici)1521-396x(199911)176:1<783::aid-pssa783>3.0.co
https://doi.org/10.1002/(sici)1521-396x(199911)176:1<783::aid-pssa783>3.0.co