Zobrazeno 1 - 10
of 58
pro vyhledávání: '"Uzlu, Burkay"'
Autor:
Illarionov, Yury Yu., Knobloch, Theresia, Uzlu, Burkay, Banshikov, Alexander G., Ivanov, Iliya A., Sverdlov, Viktor, Vexler, Mikhail I., Waltl, Michael, Wang, Zhenxing, Manna, Bibhas, Neumaier, Daniel, Lemme, Max C., Sokolov, Nikolai S., Grasser, Tibor
Graphene is a promising material for applications as a channel in graphene field-effect transistors (GFETs) which may be used as a building block for optoelectronics, high-frequency devices and sensors. However, these devices require gate insulators
Externí odkaz:
http://arxiv.org/abs/2309.11233
Autor:
Reato, Eros, Palacios, Paula, Uzlu, Burkay, Saeed, Mohamed, Grundmann, Annika, Wang, Zhenyu, Schneider, Daniel S., Wang, Zhenxing, Heuken, Michael, Kalisch, Holger, Vescan, Andrei, Radenovic, Alexandra, Kis, Andras, Neumaier, Daniel, Negra, Renato, Lemme, Max C.
Publikováno v:
Advanced Materials, 202108469, 2022
We demonstrate the design, fabrication, and characterization of wafer-scale, zero-bias power detectors based on two-dimensional MoS$_2$ field effect transistors (FETs). The MoS$_2$ FETs are fabricated using a wafer-scale process on 8 $\mu$m thick pol
Externí odkaz:
http://arxiv.org/abs/2202.04399
Autor:
Hemmetter, Andreas, Yang, Xinxin, Wang, Zhenxing, Otto, Martin, Uzlu, Burkay, Andree, Marcel, Pfeiffer, Ullrich, Vorobiev, Andrei, Stake, Jan, Lemme, Max C., Neumaier, Daniel
Publikováno v:
ACS Applied Electronic Materials 3, 9, 3747-3753, 2021
Flexible energy harvesting devices fabricated in scalable thin-film processes are important components in the field of wearable electronics and the Internet of Things. We present a flexible rectenna based on a one-dimensional junction metal-insulator
Externí odkaz:
http://arxiv.org/abs/2106.11679
Autor:
Knobloch, Theresia, Uzlu, Burkay, Illarionov, Yury Yu., Wang, Zhenxing, Otto, Martin, Filipovic, Lado, Waltl, Michael, Neumaier, Daniel, Lemme, Max C., Grasser, Tibor
Despite the enormous progress achieved during the past decade, nanoelectronic devices based on two-dimensional (2D) semiconductors still suffer from a limited electrical stability. This limited stability has been shown to result from the interaction
Externí odkaz:
http://arxiv.org/abs/2104.08172
Autor:
Wang, Zhenxing, Hemmetter, Andreas, Uzlu, Burkay, Saeed, Mohamed, Hamed, Ahmed, Kataria, Satender, Negra, Renato, Neumaier, Daniel, Lemme, Max C.
Publikováno v:
Advanced Electronic Materials, 2001210, 2021
Diodes made of heterostructures of the 2D material graphene and conventional 3D materials are reviewed in this manuscript. Several applications in high frequency electronics and optoelectronics are highlighted. In particular, advantages of metal-insu
Externí odkaz:
http://arxiv.org/abs/2103.14879
Autor:
Samaddar, Sayanti, Strasdas, Jeff, Janßen, Kevin, Just, Sven, Johnsen, Tjorven, Wang, Zhenxing, Uzlu, Burkay, Li, Sha, Neumaier, Daniel, Liebmann, Marcus, Morgenstern, Markus
Publikováno v:
Nano Letters (2021) 21 9365--9373
Dominating electron-electron scattering enables viscous electron flow exhibiting hydrodynamic current density patterns such as Poiseuille profiles or vortices. The viscous regime has recently been observed in graphene by non-local transport experimen
Externí odkaz:
http://arxiv.org/abs/2103.11466
Autor:
Wang, Zhenxing, Uzlu, Burkay, Shaygan, Mehrdad, Otto, Martin, Ribeiro, Mário, Marín, Enrique González, Iannaccone, Giuseppe, Fiori, Gianluca, Elsayed, Mohamed Saeed, Negra, Renato, Neumaier, Daniel
Publikováno v:
ACS Applied Electronic Materials, 2019, 1, 945-950
In this work, a novel one-dimensional geometry for metal-insulator-graphene (1D-MIG) diode with low capacitance is demonstrated. The junction of the 1D-MIG diode is formed at the 1D edge of Al2O3-encapsulated graphene with TiO2 that acts as barrier m
Externí odkaz:
http://arxiv.org/abs/2003.08251
Autor:
Uzlu, Burkay, Wang, Zhenxing, Lukas, Sebastian, Otto, Martin, Lemme, Max C., Neumaier, Daniel
Publikováno v:
Scientific Reports, 9:18059, 2019
We demonstrate a novel concept for operating graphene-based Hall sensors using an alternating current (AC) modulated gate voltage, which provides three important advantages compared to Hall sensors under static operation: 1) The sensor sensitivity ca
Externí odkaz:
http://arxiv.org/abs/1909.07058
Akademický článek
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Autor:
Piacentini, Agata, Polyushkin, Dmitry K., Uzlu, Burkay, Grundmann, Annika, Heuken, Michael, Kalisch, Holger, Vescan, Andrei, Wang, Zhenxing, Lemme, Max C., Mueller, Thomas, Neumaier, Daniel
Publikováno v:
Physica Status Solidi. A: Applications & Materials Science; May2024, Vol. 221 Issue 10, p1-8, 8p
