Zobrazeno 1 - 10
of 59
pro vyhledávání: '"Uygar E Avci"'
Autor:
José P. B. Silva, Ruben Alcala, Uygar E. Avci, Nick Barrett, Laura Bégon-Lours, Mattias Borg, Seungyong Byun, Sou-Chi Chang, Sang-Wook Cheong, Duk-Hyun Choe, Jean Coignus, Veeresh Deshpande, Athanasios Dimoulas, Catherine Dubourdieu, Ignasi Fina, Hiroshi Funakubo, Laurent Grenouillet, Alexei Gruverman, Jinseong Heo, Michael Hoffmann, H. Alex Hsain, Fei-Ting Huang, Cheol Seong Hwang, Jorge Íñiguez, Jacob L. Jones, Ilya V. Karpov, Alfred Kersch, Taegyu Kwon, Suzanne Lancaster, Maximilian Lederer, Younghwan Lee, Patrick D. Lomenzo, Lane W. Martin, Simon Martin, Shinji Migita, Thomas Mikolajick, Beatriz Noheda, Min Hyuk Park, Karin M. Rabe, Sayeef Salahuddin, Florencio Sánchez, Konrad Seidel, Takao Shimizu, Takahisa Shiraishi, Stefan Slesazeck, Akira Toriumi, Hiroshi Uchida, Bertrand Vilquin, Xianghan Xu, Kun Hee Ye, Uwe Schroeder
Publikováno v:
APL Materials, Vol 11, Iss 8, Pp 089201-089201-70 (2023)
Ferroelectric hafnium and zirconium oxides have undergone rapid scientific development over the last decade, pushing them to the forefront of ultralow-power electronic systems. Maximizing the potential application in memory devices or supercapacitors
Externí odkaz:
https://doaj.org/article/bdc8e7ac6d8a4918bcd408390bfda1b5
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 8, Pp 505-523 (2020)
Comprehensive channel material benchmarking for n- and pMOS are performed considering effects of quantum transport and carrier scattering. Various channel material options (Si, InAs, In0.7Ga0.3As, In0.53Ga0.47As, GaAs, and Ge for nMOS, Si and Ge for
Externí odkaz:
https://doaj.org/article/28aacb99356045f68ecdf7812c9e18ab
Autor:
Uygar E. Avci
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 6, Iss 2, Pp ii-ii (2020)
The tunneling field-effect transistor (T-FET) is considered a future transistor option due to its steep-slope prospects and the resulting advantages in operating at low supply voltage ( $V_{\mathrm {DD}}$ ). Reducing supply voltage while keeping a lo
Externí odkaz:
https://doaj.org/article/b216d4653f4b493d825f1db77fdc87f0
Autor:
Kaushik Vaidyanathan, Daniel H. Morris, Uygar E. Avci, Huichu Liu, Tanay Karnik, Hong Wang, Ian A. Young
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 4, Iss 1, Pp 10-18 (2018)
Reducing VDD while keeping leakage current low is critical for minimizing energy consumption for systems across the compute-continuum, especially in IoT. Emerging low-VDD logic devices such as tunnel FET (TFETs) offer better low-VDD performance than
Externí odkaz:
https://doaj.org/article/f77eecbcb6344509badf43afe2175e85
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 4, Iss 2, Pp 44-49 (2018)
In this paper, the transient behavior of a ferroelectric (FE)-metal–oxide–semiconductor (MOS) capacitor is theoretically investigated with a series resistor. It is shown that compared with a conventional high-k dielectric MOS capacitor, a signifi
Externí odkaz:
https://doaj.org/article/ce0d708d79e34e6ba1b34dd7ed4926f3
Publikováno v:
IEEE Journal on Exploratory Solid-State Computational Devices and Circuits, Vol 3, Pp 56-64 (2017)
Physical phenomena, underlying operation of negative capacitance field-effect transistors (NCFETs), are treated within a unified simulation framework. The framework incorporates the Landau mean-field treatment of free energy of a ferroelectric (FE) a
Externí odkaz:
https://doaj.org/article/6e0942d88ac84718b236e575a64e7ea7
Autor:
Carl H. Naylor, Chelsey Dorow, O'brien Kevin P, Kirby Maxey, Arnab Sen Gupta, Andy Hsiao, Tronic Tristan A, Penumatcha Ashish Verma, Scott B. Clendenning, Gosavi Tanay, Matthew V. Metz, Michael Christenson, Sudarat Lee, Robert L. Bristol, Uygar E. Avci, Alaan Urusa, A. A. Oni, Hui Zhu
Publikováno v:
IEEE Transactions on Electron Devices. 68:6592-6598
2-D-material channels enable ultimate scaling of MOSFET transistors and will help Moore's Law scaling for years. We demonstrate the state of both n- and p-MOSFETs using monolayer transition metal dichalcogenide (TMD) channels of sub-1 nm thickness an
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d41c0f0bcfb98257799a5d37068b6f06
https://doi.org/10.1109/ted.2021.3118659
https://doi.org/10.1109/ted.2021.3118659
Autor:
Sou-Chi Chang, Kisung Chae, Mihaela I. Popovici, Chia-Ching Lin, Saima Siddiqui, I-Cheng Tung, Jasper Bizindavyi, Bernal Granados Alpizar, Nazila Haratipour, Matthew Metz, Jack Kavalieros, Gouri S. Kar, Andrew Kummel, Kyeongjae Cho, Uygar E. Avci
Publikováno v:
2022 International Electron Devices Meeting (IEDM).
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::07937a3b38d874c2de7ac79b087a3ba5
https://doi.org/10.1109/iedm45625.2022.10019540
https://doi.org/10.1109/iedm45625.2022.10019540
Autor:
Saptarshi Das, Thomas D. Anthopoulos, Tibor Grasser, Connor J. McClellan, Uygar E. Avci, Penumatcha Ashish Verma, Lain-Jong Li, Aaron D. Franklin, Wenjuan Zhu, Theresia Knobloch, Rajendra Singh, Joerg Appenzeller, Amritanand Sebastian, Navakanta Bhat, Eric Pop, Inge Asselberghs, Zhihong Chen, Yury Yu. Illarionov
Publikováno v:
Nature Electronics. 4:786-799
Field-effect transistors based on two-dimensional (2D) materials have the potential to be used in very large-scale integration (VLSI) technology, but whether they can be used at the front end of line or at the back end of line through monolithic or h
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::2efd31326d4bd302880953d648ed9a1c
https://doi.org/10.1038/s41928-021-00670-1
https://doi.org/10.1038/s41928-021-00670-1
Publikováno v:
IEEE Journal of the Electron Devices Society, Vol 3, Iss 1, Pp 37-43 (2015)
Effects of source/drain (S/D) doping density (NSD) on the ballistic performance of III-V nanowire (NW) n-channel metal-oxide-semiconductor field-effect transistors (n-MOSFETs) are explored through atomistic quantum transport simulation. Different III
Externí odkaz:
https://doaj.org/article/944f29b719d4402bb31f673cfa5a5fc3