Zobrazeno 1 - 10
of 50
pro vyhledávání: '"Uwe Hollerbach"'
Autor:
Robert S. Eisenberg, Uwe Hollerbach
Publikováno v:
Langmuir. 18:3626-3631
127-157) is a neutral polypeptide that acts as a channel to allow ions to cross otherwise impermeablemembranes. We compute sodium chloride currents through the gramicidin A channel using the spectralelementmethodtosolvethethree-dimensionalPoisson-Ner
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e089da57e62b1ad05490105e25ed28fa
https://doi.org/10.1021/la015554+
https://doi.org/10.1021/la015554+
Publikováno v:
Journal of Scientific Computing. 16:373-409
We simulate sodium chloride currents through the gramicidin A channel using the spectral element method to solve the three-dimensional Poisson–Nernst–Planck (PNP) equations. Using the spectral element method, we are able to simulate the entire ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e55666f32fcef1743bbf27c2b1e163cd
https://doi.org/10.1023/a:1013203223798
https://doi.org/10.1023/a:1013203223798
Publikováno v:
Langmuir. 16:5509-5514
We predict the sodium current through an ion channel of known structuregramicidin A (gA)using an electrostatic model of the ion channel and an electrodiffusion model of ion movement. We use three-dimensional (3D) spectral elements to represent the ch
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e487a59788332b7e22705c581f7a8560
https://doi.org/10.1021/la991525b
https://doi.org/10.1021/la991525b
Autor:
Uwe Hollerbach
Publikováno v:
Journal of Scientific Computing. 12:3-10
Recent advances in computational microelectronics have made it possible to compute the images of very large masks. Images of entire masks require many gigabytes of storage. It is therefore desirable to make storage requirements as small as possible.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::9666937567251adb18c402f252d65cd5
https://doi.org/10.1023/a:1025685102440
https://doi.org/10.1023/a:1025685102440
Autor:
Cynthia Zhu, Suk-Joo Lee, Ja-hum Ku, John L. Sturtevant, Thuy Do, Juhwan Kim, Aasutosh Dave, Jaeyeol Maeng, Uwe Hollerbach, Yuri Granik, No-Young Chung, Min-Chul Oh, Sunwook Jung, Kostas Adam, Hyung-Joo Youn
Publikováno v:
SPIE Proceedings.
Photolithography for the formerly "non-critical" implant blocking layers is becoming more challenging as edge placement control budgets for junction definition shrink with each node. In addition to the traditional proximity effects associated with th
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::c241c0acb297c484af10504a959e0fe1
https://doi.org/10.1117/12.917984
https://doi.org/10.1117/12.917984
Publikováno v:
SPIE Proceedings.
Critical aspect ratio induced pattern collapse has been a concern for lithography process engineers since before the 180 nm node. This has driven a steady reduction in photoresist thickness, as well as accelerated the introduction of hard mask materi
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e8ac89ee5dd5767bfe03112e874712e1
https://doi.org/10.1117/12.898494
https://doi.org/10.1117/12.898494
Publikováno v:
Journal of Scientific Computing. 6:229-250
A complete numerical simulation package for submicron photolithography is described in depth. Four of the computational steps are analyzed: aerial image generation, exposure, postexposure bake, and dissolution. An application to bar printing over a M
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::797b1f6803f4c3ff204d3f234363f68f
https://doi.org/10.1007/bf01062811
https://doi.org/10.1007/bf01062811
Autor:
Uwe Hollerbach, Douglas Van Den Broeke, Thomas Laidig, J. Fung Chen, Stephen Hsu, Michael Hsu
Publikováno v:
SPIE Proceedings.
For advance semiconductor manufacturing, patterning contact and via mask layers continue to be major challenge. As a result, RET's beyond the current standard 6% attPSM technology are being pursued with a goal of reducing the k 1 for hole patterning
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::d77a3b98288782808d52d8a070a4256a
https://doi.org/10.1117/12.681811
https://doi.org/10.1117/12.681811
Autor:
Jang Fung Cupertino Chen, Stephen Hsu, Thomas Laidig, Uwe Hollerbach, Jungchul Park, Ting Chen, Xuelong Shi, Keith Gronlund, Robert John Socha, Sangbong Park, Douglas Van Den Broeke, Michael C. W. Hsu, Kurt E. Wampler
Publikováno v:
SPIE Proceedings.
With immersion and hyper numerical aperture (NA>1) optics apply to the ITRS 2003/4 roadmap scenario (Figure 1); it is very clear that the IC manufacturing has already stepped into the final frontier of optical lithography. Today’s advanced lithogra
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dcca599b59275212b712b9717dd3e1d1
https://doi.org/10.1117/12.617430
https://doi.org/10.1117/12.617430
Autor:
Michael Hsu, Xuelong Shi, Jang Fung Cupertino Chen, Stephen Hsu, Robert John Socha, Thomas Laidig, Doug Van Den Broeke, Kurt E. Wampler, Uwe Hollerbach
Publikováno v:
SPIE Proceedings.
Scattering Bars (SB) OPC, together with optimized illumination, is no doubt one of the critical enablers for low k 1 lithography manufacturing. The manufacturing implementation of SB so far has been mainly based on rule-based approach. While this has
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::4c0f871a9cde0b6d2811848332241824
https://doi.org/10.1117/12.617165
https://doi.org/10.1117/12.617165