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of 34
pro vyhledávání: '"Utt, Daniel"'
Efficient, reliable and easy-to-use structure recognition of atomic environments is essential for the analysis of atomic scale computer simulations. In this work, we train two neuronal network (NN) architectures, namely PointNet and dynamic graph con
Externí odkaz:
http://arxiv.org/abs/2405.05156
The vacancy concentration at finite temperatures is studied for a series of (CoCrFeMn)$_{1-x_\mathrm{Ni}}$Ni$_{x_\mathrm{Ni}}$ alloys by grand-canonical Monte-Carlo (MC) simulations. The vacancy formation energies are calculated from a classical inte
Externí odkaz:
http://arxiv.org/abs/2104.02697
Autor:
Utt, Daniel, Lee, Subin, Xing, Yaolong, Jeong, Hyejin, Stukowski, Alexander, Oh, Sang Ho, Dehm, Gerhard, Albe, Karsten
Publikováno v:
Utt, D., Lee, S., Xing, Y. et al. The origin of jerky dislocation motion in high-entropy alloys. Nat Commun 13, 4777 (2022)
Dislocations in single-phase concentrated random alloys, including high- entropy alloys (HEAs), repeatedly encounter pinning during glide, resulting in jerky dislocation motion. While solute-dislocation interaction is well understood in conventional
Externí odkaz:
http://arxiv.org/abs/2007.11489
Autor:
Kottke, Josua, Utt, Daniel, Laurent-Brocq, Mathilde, Fareed, Adnan, Gaertner, Daniel, Perriere, Loic, Rogal, Lukasz, Stukowski, Alexander, Albe, Karsten, Divinski, Sergiy V., Wilde, Gerhard
Tracer diffusion of all constituting elements is studied at various temperatures in a series of (CoCrFeMn)$_{100-x}$Ni$_x$ alloys with compositions ranging from pure Ni to the equiatomic CoCrFeMnNi high-entropy alloy. At a given homologous temperatur
Externí odkaz:
http://arxiv.org/abs/2003.09474
Autor:
Henck, Hugo, Avila, Jose, Aziza, Zeineb Ben, Pierucci, Debora, Baima, Jacopo, Pamuk, Betül, Chaste, Julien, Utt, Daniel, Bartos, Miroslav, Nogajewski, Karol, Piot, Benjamin A., Orlita, Milan, Potemski, Marek, Calandra, Matteo, Asensio, Maria C., Mauri, Francesco, Faugeras, Clément, Ouerghi, Abdelkarim
Publikováno v:
Phys. Rev. B 97, 245421 (2018)
The crystallographic stacking order in multilayer graphene plays an important role in determining its electronic properties. It has been predicted that a rhombohedral (ABC) stacking displays a conducting surface state with flat electronic dispersion.
Externí odkaz:
http://arxiv.org/abs/1708.03220
Autor:
Koch, Leonie, Granberg, Fredric, Brink, Tobias, Utt, Daniel, Albe, Karsten, Djurabekova, Flyura, Nordlund, Kai
Publikováno v:
J. Appl. Phys. 122, 105106 (2017)
We study order transitions and defect formation in a model high-entropy alloy (CuNiCoFe) under ion irradiation by means of molecular dynamics simulations. Using a hybrid Monte-Carlo/molecular dynamics scheme a model alloy is generated which is thermo
Externí odkaz:
http://arxiv.org/abs/1704.02812
Autor:
Kottke, Josua, Utt, Daniel, Laurent-Brocq, Mathilde, Fareed, Adnan, Gaertner, Daniel, Perrière, Loïc, Rogal, Łukasz, Stukowski, Alexander, Albe, Karsten, Divinski, Sergiy V., Wilde, Gerhard
Publikováno v:
In Acta Materialia 1 August 2020 194:236-248
Publikováno v:
In Scripta Materialia June 2020 182:53-56
Publikováno v:
In Acta Materialia March 2020 186:11-19
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