Zobrazeno 1 - 10
of 54
pro vyhledávání: '"Utsugi, Satoru"'
Autor:
Utsugi, Satoru, Ehara, Yoshitaka, Tanaka, Hidenori, Yamada, Tomoaki, Funakubo, Hiroshi, Uchida, Hiroshi
Publikováno v:
In Journal of Crystal Growth 2010 312(21):3127-3130
Publikováno v:
J. Ceram. Soc. Jpn.. 126(No. 11):936-939
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::8de9f00217ba88bc246c29d86036c48d
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100803153
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100803153
Autor:
Kazuki Kobayashi, Ishida Shigeru, Nobutake Nodera, Michinaka Satoshi, Takao Matsumoto, Ryohei Takakura, Oketani Taimi, Matsushima Yoshiaki, Utsugi Satoru
Publikováno v:
Journal of the Society for Information Display. 24:394-401
— We developed partial laser anneal silicon (PLAS) thin-film transistor (TFT) of novel low-temperature polycrystalline-silicon (LTPS) technology, which had the mobility of 28.1 cm2/Vs lager than that of mass produced oxide TFT and photo-stability c
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::01a8d504dc052a06e67eb81ee3939e5a
https://doi.org/10.1002/jsid.455
https://doi.org/10.1002/jsid.455
Publikováno v:
SID Symposium Digest of Technical Papers. 47:915-918
We developed Partial Laser Anneal Silicon (PLAS) TFT of novel LTPS technology for large substrate, which had the mobility of 28.1 cm2/Vs in bottom gate structure. Moreover there is no limit of substrate size, such as Gen10 and more. This innovative t
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::922197e6c14fd1732964af5be1d1a66d
https://doi.org/10.1002/sdtp.10849
https://doi.org/10.1002/sdtp.10849
Autor:
Yasui, Shintaro, Ehara, Yoshitaka, Utsugi, Satoru, Nakajima, Mitsumasa, Funakubo, Hiroshi, Gruverman, Alexei
Publikováno v:
Journal of Applied Physics; Sep2012, Vol. 112 Issue 5, p052001, 5p
Autor:
Ehara, yoshitaka, Utsugi, Satoru, Nakajima, Mitsumasa, Yamada, Tomoaki, Iijima, Takashi, nishida, ken, FUNAKUBO, HIROSHI
Publikováno v:
J. Mater. Res.. 27(No. 11):1430-1435
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::60ac1ed0d944850fbf13712d5b57127b
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100640453
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100640453
Publikováno v:
Jpn. J. Appl. Phys.. 53
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::ddedaf8539a05b8e6b1cd0517f24b9a0
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100673517
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100673517
Publikováno v:
Mater. Res. Soc. Symp. Proc.. 1507
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::54251d581f7705285ebf547fde998b46
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100664010
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100664010
Akademický článek
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Autor:
Nakaki, Hiroshi, Utsugi, Satoru, Fujisawa, Takashi, Nakajima, Mitsumasa, Ehara, yoshitaka, Yamada, Tomoaki, morioka, hitoshi, FUNAKUBO, HIROSHI
Publikováno v:
Mater. Res. Soc. Symp. Proc.. 1199
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=jairo_______::99c68d28086bcd627942ef991a0f2dfe
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100613239
http://t2r2.star.titech.ac.jp/cgi-bin/publicationinfo.cgi?q_publication_content_number=CTT100613239