Zobrazeno 1 - 6
of 6
pro vyhledávání: '"Ute Singliar"'
Publikováno v:
Solid State Phenomena. 262:265-268
Using a commercially available solvent impregnated resin, Lewatit TP272, in an ion exchange process, it was possible to extract up to 90 % indium from a feed containing as little as 1 mg/L indium in the presence of high amounts of impurities, i.e. 10
Publikováno v:
Chemie Ingenieur Technik. 89:135-143
Der Bedarf an Indium steigt mit dem Wachstum der Elektronikbranche, in der es vorwiegend eingesetzt wird. Daher wurde anhand einer Modelllosung, die in ihrer wesentlichen Zusammensetzung dem Erz Sphalerit entsprach, ein mehrstufiges Extraktionsverfah
Publikováno v:
Silicon. 9:135-145
In situ boron, or phosphorous doped silicon nanoparticles were synthesised by pyrolysis of monosilane-diborane and monosilane-phosphane mixtures in free-space reactors. The studies were performed under atmospheric pressure in a laboratory reactor and
Publikováno v:
International Journal of Mineral Processing. 156:134-136
Automobile exhaust catalysts and electronic equipment, for instance, are rich in platinum group metals (PGMs). At the end of their lifecycles catalytic converters are smelted in electric arc furnaces (EAF) for PGM recovery. With approx. 40 ppm, PGM d
Autor:
J. Heimfarth, Klaus Bohmhammel, Peter Fröhlich, Gerald Ziegenbalg, Edwin Kroke, Ute Singliar, A. Müller, C. Sprung, Florian Mertens, C. Schubert, J. Erler, Gerhard Roewer, Jürgen Seidel, Carsten Pätzold, Martin Bertau
Publikováno v:
Silicon. 7:31-42
Silicon nanopowders were prepared by hot-wire chemical vapour deposition (CVD) from monosilane. Wire materials including Hf, Nb, Ta, Mo, W, Rh, Re, Ir, Pd, and Pt were tested. The filament temperature was varied in the range of 400–2000 ℃ and pre
Autor:
Ute Singliar, Gerald Ziegenbalg
Publikováno v:
Chemical Vapor Deposition. 10:270-274
Multicomponent nanopowders can be produced using vapor phase ammonolysis of SiCl 4 /TiCl 4 mixtures at 800°C and 1000 °C. Uniform particles with spherical morphology and diameters between 150 nm and 350 nm are obtained. At 800 °C, crystalline TiN