Zobrazeno 1 - 10
of 34
pro vyhledávání: '"Uta Juda"'
Autor:
Wolfram Miller, Nikolay Abrosimov, Jörg Fischer, Alexander Gybin, Uta Juda, Stefan Kayser, Jószef Janicskó-Csáthy
Publikováno v:
Crystals, Vol 10, Iss 1, p 18 (2019)
A numerical scheme was developed to compute the thermal and stress fields of the Czochralski process in a quasi-time dependent mode. The growth velocity was computed from the geometrical changes in melt and crystal due to pulling for every stage, for
Externí odkaz:
https://doaj.org/article/d2054081823d4c33bb295f8aa6db7cf2
Autor:
Rajappan Radhakrishnan Sumathi, Alexander Gybin, Kevin‐P. Gradwohl, Pradeep Chandra Palleti, Mike Pietsch, Klaus Irmscher, Natasha Dropka, Uta Juda
Publikováno v:
Crystal Research and Technology. 58
Autor:
Sebastian Daszko, Carsten Richter, Jens Martin, Katrin Berger, Uta Juda, Christiane Frank-Rotsch, Patrick Steglich, Karoline Stolze
Publikováno v:
ECS Meeting Abstracts. :863-863
The next-generation internet (6G) requires highly functional devices that e.g. realize frequencies in the THz range for higher data rates and lower latencies. Those requirements exceed the physical limits of established CMOS technologies based on sil
Autor:
Markus Weyers, Andrea Dittmar, Uta Juda, Carsten Netzel, Jürgen Wollweber, Carsten Hartmann, Arne Knauer, Anna Mogilatenko, Jörg Jeschke, Ralph-Stephan Unger, Matthias Bickermann, Ute Zeimer
Publikováno v:
Journal of Crystal Growth. 505:69-73
MOVPE growth of AlN layers on bulk AlN substrates with low threading dislocation density (
Autor:
Robert Menzel, Frank M. Kießling, T. Richter, Stefan Kayser, H.-J. Rost, Dietmar Siche, Lamine Sylla, Uta Juda
Publikováno v:
Journal of Crystal Growth. 500:5-10
The crucible free growth of dislocation free respectively low defect single crystals on large diameter silicon seeds without using the common Dash technique was investigated. A promising concept to reach this aim was to reduce the thermal gradients a
Publikováno v:
Journal of Crystal Growth. 573:126285
Germanium crystal grown by the Czochralski method in [ 2 1 1 ] and [ 1 1 0 ] direction have been investigated by etching methods and the charge carrier lifetime was analyzed by microwave-detected photoconductance decay. The etch pit density of the cr
Autor:
Steffen Ganschow, Robert Schewski, Kookrin Char, Martin Albrecht, Albert Kwasniewski, Detlef Klimm, Martina Zupancic, Andrea Dittmar, Claudia Draxl, Wahib Aggoune, Klaus Irmscher, Raimund Grueneberg, Thomas Schroeder, Sabine Bergmann, Mike Pietsch, Matthias Bickermann, Uta Juda, Zbigniew Galazka, Hyeongmin Cho, Tobias Schulz
Publikováno v:
physica status solidi (a). 218:2100016
Autor:
Zbigniew Galazka, Dirk J. Kok, Matthias Bickermann, Christo Guguschev, Uta Juda, Sakari Sintonen, Reinhard Uecker
Publikováno v:
Journal of Crystal Growth. 468:305-310
Strontium titanate (SrTiO3), a well-established traditional perovskite substrate as well as a promising substrate crystal for the epitaxy of new advanced perovskite-type thin films, suffers from the unavailability in adequate quality for the latter.
Autor:
Jörg Fischer, Stefan Kayser, Alexander Gybin, Jószef Janicskó-Csáthy, Uta Juda, Wolfram Miller, Nikolay V. Abrosimov
Publikováno v:
Crystals
Volume 10
Issue 1
Crystals, Vol 10, Iss 1, p 18 (2019)
Volume 10
Issue 1
Crystals, Vol 10, Iss 1, p 18 (2019)
A numerical scheme was developed to compute the thermal and stress fields of the Czochralski process in a quasi-time dependent mode. The growth velocity was computed from the geometrical changes in melt and crystal due to pulling for every stage, for
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::7203501452193e654e95aa8b24ef02c1
Autor:
Thomas Schroeder, Klaus Irmscher, Detlef Klimm, Albert Kwasniewski, Raimund Grueneberg, Matthias Bickermann, Martin Albrecht, Andreas Popp, Steffen Ganschow, Saud Bin Anooz, Andrea Dittmar, Robert Schewski, Isabelle Hanke, Mike Pietsch, Uta Juda, Zbigniew Galazka, Tobias Schulz
Publikováno v:
Progress in Crystal Growth and Characterization of Materials. 67:100511
In the course of development of transparent semiconducting oxides (TSOs) we compare the growth and basic physical properties bulk single crystals of ultra-wide bandgap (UWBG) TSOs, namely β-Ga2O3 and Ga-based spinels MgGa2O4, ZnGa2O4, and Zn1-xMgxGa