Proton radiation damage in high-resistivity n-type silicon CCDs

Autor: Bebek, C.J., Groom, D.E., Holland, S.E., Karcher, A., Kolbe, W.F., Lee, J., Levi, M.E., Palaio, N.P., Turko, B.T., Uslenghi, M.C., Wagner, M.T., Wang, G.

Publikováno v: Bebek, C.J.; Groom, D.E.; Holland, S.E.; Karcher, A.; Kolbe, W.F.; Lee, J.; et al.(2001). Proton radiation damage in high-resistivity n-type silicon CCDs. Lawrence Berkeley National Laboratory. Lawrence Berkeley National Laboratory: Lawrence Berkeley National Laboratory. Retrieved from: http://www.escholarship.org/uc/item/7gh2k9vg

A new type of p-channel CCD constructed on high-resistivity n-type silicon was exposed to 12 MeV protons at doses up to 1x1011 protons/cm2. The charge transfer efficiency was measured as a function of radiation dose and temperature. We previously rep

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http://www.escholarship.org/uc/item/7gh2k9vg

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