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pro vyhledávání: '"Uskova, E. A."'
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Autor:
Dorokhin, M. V., Boldin, M. S., Uskova, E. A., Boryakov, A. V., Demina, P. B., Erofeeva, I. V., Zdoroveyshchev, A. V., Kotomina, V. E., Kuznetsov, Yu. M., Lantsev, E. A., Popov, A. A., Trushin, V. N.
Publikováno v:
Technical Physics; 2024, Vol. 69 Issue 3, p517-525, 9p
Autor:
Arapov, Yu. G., Gudina, S. V., Harus, G. I., Neverov, V. N., Shelushinina, N. G., Yakunin, M. V., Podgornyh, S. M., Uskova, E. A., Zvonkov, B. N.
The resistivity (R) of low mobility dilute 2D-electron gas in a n-InGaAs/GaAs double quantum well (DQW) exhibits the monotonic 'insulating-like' temperature dependence (dR/dT < 0) at T = 1.8 -- 70K in zero magnetic field. This temperature interval co
Externí odkaz:
http://arxiv.org/abs/cond-mat/0512678
Autor:
Yakunin, M. V., Alshanskii, G. A., Arapov, Yu. G., Harus, G. I., Neverov, V. N., Shelushinina, N. G., Kuznetsov, O. A., Zvonkov, B. N., Uskova, E. A., Ponomarenko, L., de Visser, A.
Publikováno v:
Physica E, v.22 (1-3), pp.68-71 (2004).
In In_xGa_{1-x}As/n-GaAs double quantum wells (DQWs) containing an electron gas, the magnetoresistance (MR) peculiarities under parallel magnetic fields caused by the passing of the tunnel gap edges through the Fermi level are revealed. Peculiarities
Externí odkaz:
http://arxiv.org/abs/cond-mat/0306156
Autor:
Minkov, G. M., Rut, O. E., Germanenko, A. V., Sherstobitov, A. A., Zvonkov, B. N., Uskova, E. A., Birukov, A. A.
Publikováno v:
Phys. Rev. B 65, 235322 (2002)
Results of detailed investigations of the conductivity and Hall effect in gated single quantum well GaAs/InGaAs/GaAs heterostructures with two-dimensional electron gas are presented. A successive analysis of the data has shown that the conductivity i
Externí odkaz:
http://arxiv.org/abs/cond-mat/0111525
Autor:
Minkov, G. M., Germanenko, A. V., Rut, O. E., Sherstobitov, A. A., Zvonkov, B. N., Uskova, E. A., Birukov, A. A.
Publikováno v:
Phys. Rev. B 64, 193309 (2001)
The temperature and gate voltage dependences of the phase breaking time are studied experimentally in GaAs/InGaAs heterostructures with single quantum well. It is shown that appearance of states at the Fermi energy in the doped layers leads to a sign
Externí odkaz:
http://arxiv.org/abs/cond-mat/0106045
Autor:
Uskova, E. V.
Материалистические теории сознания подвергаются критике в не меньшей степени, чем дуалистические. Среди наиболее известных линий напа
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______917::7fc7b5810bc16a764d50dd12705af778
https://elar.urfu.ru/handle/10995/109076
https://elar.urfu.ru/handle/10995/109076
Autor:
Gasparovich, E. O.1, Uskova, E. V.1
Publikováno v:
International Multidisciplinary Scientific Conference on Social Sciences & Arts SGEM. 2017, p665-670. 6p.
Autor:
Uskova, E. V.
When describing and studying the world, philosophy and other sciences proceed from such epistemological positions as realism/antirealism in relation to the world (ontological approach), in relation to the possibility of its cognition (epistemological
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=od_______917::b303d09b578f06d0a596b18b3c2143bd
https://hdl.handle.net/10995/95487
https://hdl.handle.net/10995/95487
Autor:
null Trushin V. N., null Popov A. A., null Lantsev E. A., null Кuzetsov Yu. M., null Kotomina V. E., null Zdoroveyshchev A. V., null Erofeeva I. V., null Demina P. B., null Boryakov A. V., null Uskova E. A., null Boldin M.S., null Dorokhin M. V.
Publikováno v:
Technical Physics. 67:2402
The kinetics of diffusion processes occurring during the formation of polycrystalline Si1-xGex nanostructures (x=0.20, 0.35) by spark plasma sintering in the temperature range 20-1200oC was studied for the first time. A mechanism for the formation of
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::766e7613156deee22df06a6b1b32a01b
https://doi.org/10.21883/tp.2022.15.55267.152-21
https://doi.org/10.21883/tp.2022.15.55267.152-21