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pro vyhledávání: '"Useinov, Artur"'
This work represents integration of MTJ with 30nm FinFET for low voltage analog write operations and readout optimization for the p-bit or true random number generator (TRNG), where the induced p-bit, the probabilistic state of the magnetic tunnel ju
Externí odkaz:
http://arxiv.org/abs/2204.14204
Autor:
Useinov, Artur
Publikováno v:
SPIN Vol. 11, No. 4 (2021) 2150031 (7 pages)
This work is focused on determining the electrical resistance, which induced by single domain wall in magnetic nanowire with a negligible defect. The provided model covers a wide range of nanowire's diameters. The obtained result demonstrates a few o
Externí odkaz:
http://arxiv.org/abs/2203.06960
Publikováno v:
In Microelectronic Engineering 1 January 2024 283
Publikováno v:
In Physica E: Low-dimensional Systems and Nanostructures October 2023 154
Akademický článek
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The work presents the extended theoretical model of the electrical conductance in non-magnetic and magnetic nano-size point contacts. The developed approach describes diffusive, quasi-ballistic, ballistic and quantum regimes of the spin-resolved cond
Externí odkaz:
http://arxiv.org/abs/1710.00496
Autor:
Jagga, Deepali, Useinov, Artur
Publikováno v:
Journal of Applied Physics; 9/28/2023, Vol. 134 Issue 12, p1-9, 9p
Publikováno v:
In Journal of Alloys and Compounds 15 March 2021 857
Publikováno v:
Advanced Electronic Materials; Jul2024, Vol. 10 Issue 7, p1-7, 7p
Publikováno v:
In Journal of Magnetism and Magnetic Materials 15 August 2020 508