Zobrazeno 1 - 9
of 9
pro vyhledávání: '"Urvashi Varshney"'
Autor:
Shubhendra Kumar Jain, Pratibha Goel, Urvashi Varshney, Tushar Garg, Neha Aggarwal, Shibin Krishna, Sandeep Singh, Govind Gupta
Publikováno v:
Applied Surface Science Advances, Vol 5, Iss , Pp 100106- (2021)
Gallium oxide (Ga2O3) has emerged as a fourth-generation semiconductor for futuristic device requirements. Integration of Ga2O3 with industry-viable gallium nitride (GaN) can provide a pathway to design efficient device technology. In this paper, we
Externí odkaz:
https://doaj.org/article/05fc2101af66427fb978f2d20fd2d1df
Autor:
V. Aggarwal, Sudhanshu Gautam, Urvashi Varshney, A. K. Mauraya, Rahul Kumar, G. Gupta, Ramakrishnan Ganesan, M. Senthil Kumar, S. S. Kushvaha
Publikováno v:
Journal of Materials Research. 38:429-438
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::0d1f7ae55e6494e56f2f52db35d27f27
https://doi.org/10.1557/s43578-022-00828-3
https://doi.org/10.1557/s43578-022-00828-3
Publikováno v:
ACS Applied Electronic Materials. 4:5641-5651
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::7aa22fbadee9d9b20f35ccd3afcfc82f
https://doi.org/10.1021/acsaelm.2c01362
https://doi.org/10.1021/acsaelm.2c01362
Publikováno v:
Journal of Materials Chemistry C. 10:1573-1593
Recent advancements and applications of solar-blind ultraviolet photodetectors utilizing Ga2O3 and AlGaN materials.
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::e70b2971175f914e5f390459fb907a96
https://doi.org/10.1039/d1tc05101f
https://doi.org/10.1039/d1tc05101f
Autor:
V. Aggarwal, C. Ramesh, Urvashi Varshney, P. Tyagi, S. Gautam, A. K. Mauraya, B. S. Yadav, G. Gupta, Ramakrishnan Ganesan, M. Senthil Kumar, S. S. Kushvaha
Publikováno v:
Applied Physics A. 128
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::dab1861859f6d74cf57441d053efde01
https://doi.org/10.1007/s00339-022-06134-3
https://doi.org/10.1007/s00339-022-06134-3
Publikováno v:
Materials Science in Semiconductor Processing. 164:107612
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::ecfc5d4c8a16995fff4ea2cfa2172405
https://doi.org/10.1016/j.mssp.2023.107612
https://doi.org/10.1016/j.mssp.2023.107612
Autor:
Anuj Sharma, Urvashi Varshney, Pargam Vashishtha, Aditya Yadav, Pukhraj Prajapat, Preetam Singh, Govind Gupta
Publikováno v:
Materials Science in Semiconductor Processing. 164:107611
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::601c3f16c8e688abb7b8173b101393c5
https://doi.org/10.1016/j.mssp.2023.107611
https://doi.org/10.1016/j.mssp.2023.107611
Publikováno v:
Materials Chemistry and Physics. 296:127241
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_________::62d0d6f4fc78258151aa67a7e130937d
https://doi.org/10.1016/j.matchemphys.2022.127241
https://doi.org/10.1016/j.matchemphys.2022.127241
Autor:
Neha Aggarwal, Govind Gupta, Urvashi Varshney, Shubhendra Kumar Jain, Shibin Krishna, Pratibha Goel, Sandeep Singh, Tushar Garg
Publikováno v:
Applied Surface Science Advances, Vol 5, Iss, Pp 100106-(2021)
Gallium oxide (Ga2O3) has emerged as a fourth-generation semiconductor for futuristic device requirements. Integration of Ga2O3 with industry-viable gallium nitride (GaN) can provide a pathway to design efficient device technology. In this paper, we
Externí odkaz:
https://explore.openaire.eu/search/publication?articleId=doi_dedup___::6c5a96bcbedcc098a601e31d73a265d6
http://www.sciencedirect.com/science/article/pii/S2666523921000520
http://www.sciencedirect.com/science/article/pii/S2666523921000520