Zobrazeno 1 - 8
of 8
pro vyhledávání: '"Urvashi Bothra"'
Autor:
Urvashi Bothra, Pramiti Hui, Wen Liang Tan, Eliot Gann, Hariprasad Venugopal, Chandramouli Subramaniam, Amelia C. Y. Liu, Christopher R. McNeill, Dinesh Kabra
Publikováno v:
Journal of Materials Chemistry A. 10:24662-24675
A range of advanced imaging techniques are employed to study the micron- and nano-scale morphology of a polymer/non-fullerene acceptor blend. Cryo-electron microscopy in particular reveals nanoscale variations in molecular orientation and order.
Autor:
Xiaobo Zhou, Hongbo Wu, Urvashi Bothra, Xingze Chen, Guanyu Lu, Heng Zhao, Chao Zhao, Qun Luo, Guanghao Lu, Ke Zhou, Dinesh Kabra, Zaifei Ma, Wei Ma
Publikováno v:
Materials horizons.
Indoor organic photovoltaics (OPVs) have shown great potential application in driving low-energy-consumption electronics for the Internet of Things. There is still great room for further improving the power conversion efficiency (PCE) of indoor OPVs,
Autor:
Nakul Jain, Xuechen Jiao, Abhinav Kala, Dinesh Kabra, Wenchao Huang, Christopher R. McNeill, Amelia C. Y. Liu, Urvashi Bothra, Eliot Gann, Venu Gopal Achanta
Publikováno v:
ACS Applied Nano Materials. 3:11080-11089
The nanomorphology of bulk heterojunction (BHJ) blends based on poly[[4,8-bis[(2-ethylhexyl)oxy]benzo[1,2-b:4,5-b′]dithiophene-2,6-diyl][3-fluoro-2-[(2-ethylhexyl)carbonyl]thieno[3,4-b]thiophenediy...
Autor:
Varun Adiga, Arun Dhumal Rao, Sandeep B. Satyanarayana, Upendra Kumar Pandey, Urvashi Bothra, Arul K Varman, Swathi S. Kanichar, Sean M. Garner, Praveen Ramamurthy
Publikováno v:
SSRN Electronic Journal.
Publikováno v:
Advanced Optical Materials. 11:2201897
Publikováno v:
Advanced Materials Interfaces. 9:2101377
Autor:
Kamendra P. Sharma, Lohitha R. Hegde, Gangadhar Banappanavar, Dinesh Kabra, Urvashi Bothra, Sumukh Vaidya, Richard H. Friend
Publikováno v:
Applied Physics Reviews. 8:031415
The exciton physics of organic semiconductors is exotic. It is a domain in which singlet and triplet kinetics both play an important role in determining the performance of various optoelectronic devices. Since triplet excitons are non-emissive, it br
Autor:
Aditya Sadhanala, Christopher R. McNeill, Dinesh Kabra, Urvashi Bothra, Richard H. Friend, Nakul Jain, Dhanashree Moghe
Publikováno v:
ACS applied materialsinterfaces. 10(51)
By varying the concentration of a solvent additive, we demonstrate the modulation of intermolecular (donor/acceptor (D/A) interface) and intramolecular (bulk) disorder in blends of the low-band gap polymer poly[2,6-(4,4-bis(2-ethylhexyl)-4H-cyclopent